EP 0000123 A1 19790110 - Method for growing monocrystalline layers from the liquid phase by the sliding boat system.
Title (en)
Method for growing monocrystalline layers from the liquid phase by the sliding boat system.
Title (de)
Verfahren zum Abscheiden einkristalliner Schichten nach der Flüssigphasen-Schiebeepitaxie.
Title (fr)
Procédé de dépÔt de couches monocristallines à partir de la phase liquide selon le système de glissement de coulisses.
Publication
Application
Priority
DE 2730358 A 19770705
Abstract (en)
[origin: US4149914A] A method of depositing a plurality of epitaxial monocrystalline layers of semiconductive materials onto an individual substrate of a plurality of substrates via the sliding liquid phase epitaxy technique whereby the spacing between respective melt-containing chambers and respective substrate-receiving recesses are substantially equal to one another and, during the deposition stage, the temperature of all melts located on respective substrates is lowered a substantially identical amount so that a corresponding epitaxial layer grows on each such substrate.
Abstract (de)
Verfahren zum Abscheiden jeweils mehrerer einkristalliner Schichten (111, 112, 121) gleichzeitig auf mehreren Substraten (11, 12, 13) nach dem Prinzip der Flüssigphasen-Schiebeepitaxie, wobei die abzuscheidenden Materialien in einzelnen Kammern (21, 22, 23) vorliegen und wobei sowohl die Substrate (11, 12, 13) als auch die Kammern (21, 22, 23) in gleichen Abständen voneinander angeordnet sind und bei einem jeden Abscheidevorgang die Temperatur aller sich jeweils auf einem Substrat (11, 12, 13) befindlichen Schmelzen um den gleichen Betrag gesenkt wird.
IPC 1-7
IPC 8 full level
C30B 19/06 (2006.01); H01L 21/208 (2006.01); C30B 19/00 (2006.01); H01L 21/368 (2006.01)
CPC (source: EP US)
B09B 1/008 (2013.01 - EP US); C30B 19/063 (2013.01 - EP US); H01L 21/02395 (2013.01 - EP US); H01L 21/02463 (2013.01 - EP US); H01L 21/02546 (2013.01 - EP US); H01L 21/02625 (2013.01 - EP US)
Citation (search report)
- [A] US RE28140 E 19740827
- [A] US 3933538 A 19760120 - AKAI SHIN-ICHI, et al
- [A] US 3899137 A 19750812 - SHENKER MARTIN
- [A] INSTRUMENTS AND EXPERIMENTAL TECHNIQUES, vol. 19, nr. 4, Punkt 2, 1976, S.G. ZHILENIS et al " Cassette for batch growth of layers by the liquid-epitaxy method", Seiten 1221 bis 1222
Designated contracting state (EPC)
BE FR GB SE
DOCDB simple family (publication)
EP 0000123 A1 19790110; EP 0000123 B1 19810225; CA 1116312 A 19820112; DE 2730358 A1 19790111; DE 2730358 B2 19810527; DE 2730358 C3 19820318; IT 1096839 B 19850826; IT 7825180 A0 19780630; JP S5414669 A 19790203; JP S6235260 B2 19870731; US 4149914 A 19790417
DOCDB simple family (application)
EP 78100110 A 19780607; CA 306752 A 19780704; DE 2730358 A 19770705; IT 2518078 A 19780630; JP 8083378 A 19780703; US 91416778 A 19780609