Global Patent Index - EP 0000123 B1

EP 0000123 B1 19810225 - METHOD FOR GROWING MONOCRYSTALLINE LAYERS FROM THE LIQUID PHASE BY THE SLIDING BOAT SYSTEM.

Title (en)

METHOD FOR GROWING MONOCRYSTALLINE LAYERS FROM THE LIQUID PHASE BY THE SLIDING BOAT SYSTEM.

Publication

EP 0000123 B1 19810225 (DE)

Application

EP 78100110 A 19780607

Priority

DE 2730358 A 19770705

Abstract (en)

[origin: US4149914A] A method of depositing a plurality of epitaxial monocrystalline layers of semiconductive materials onto an individual substrate of a plurality of substrates via the sliding liquid phase epitaxy technique whereby the spacing between respective melt-containing chambers and respective substrate-receiving recesses are substantially equal to one another and, during the deposition stage, the temperature of all melts located on respective substrates is lowered a substantially identical amount so that a corresponding epitaxial layer grows on each such substrate.

IPC 1-7

C30B 19/00; H01L 21/208

IPC 8 full level

C30B 19/00 (2006.01); C30B 19/06 (2006.01); H01L 21/208 (2006.01); H01L 21/368 (2006.01)

CPC (source: EP US)

B09B 1/008 (2013.01 - EP US); C30B 19/063 (2013.01 - EP US); H01L 21/02395 (2013.01 - EP US); H01L 21/02463 (2013.01 - EP US); H01L 21/02546 (2013.01 - EP US); H01L 21/02625 (2013.01 - EP US)

Designated contracting state (EPC)

BE FR GB SE

DOCDB simple family (publication)

EP 0000123 A1 19790110; EP 0000123 B1 19810225; CA 1116312 A 19820112; DE 2730358 A1 19790111; DE 2730358 B2 19810527; DE 2730358 C3 19820318; IT 1096839 B 19850826; IT 7825180 A0 19780630; JP S5414669 A 19790203; JP S6235260 B2 19870731; US 4149914 A 19790417

DOCDB simple family (application)

EP 78100110 A 19780607; CA 306752 A 19780704; DE 2730358 A 19770705; IT 2518078 A 19780630; JP 8083378 A 19780703; US 91416778 A 19780609