EP 0000169 B1 19811007 - SEMICONDUCTOR JUNCTION CAPACITOR IN INTEGRATED METHOD OF CONSTRUCTION AND BOOTSTRAP CIRCUIT WITH SUCH A CAPACITOR
Title (en)
SEMICONDUCTOR JUNCTION CAPACITOR IN INTEGRATED METHOD OF CONSTRUCTION AND BOOTSTRAP CIRCUIT WITH SUCH A CAPACITOR
Publication
Application
Priority
US 81102877 A 19770629
Abstract (en)
[origin: US4191899A] An integrated circuit junction capacitor is formed using conventional bipolar transistor technology. Voltage variable capacitance is provided by a reverse biased emitter-base junction and parasitic collector-base capacitance is isolated from the emitter-base capacitance by maintaining the base-collector junction in a reverse biased condition. A bootstrapped driver circuit is also described in which bootstrap current is provided by a transistor-like structure in which an internal load capacitance enables circuit performance to remain substantially constant under various driven load conditions.
IPC 1-7
IPC 8 full level
H01L 21/331 (2006.01); H01L 21/822 (2006.01); H01L 27/04 (2006.01); H01L 27/07 (2006.01); H01L 27/08 (2006.01); H01L 29/73 (2006.01); H01L 29/93 (2006.01); H03K 19/013 (2006.01); H03K 19/018 (2006.01); H03K 19/082 (2006.01)
CPC (source: EP US)
H01L 27/0777 (2013.01 - EP US); H01L 27/0808 (2013.01 - EP US); H01L 29/93 (2013.01 - EP US); H03K 19/013 (2013.01 - EP US); H03K 19/01806 (2013.01 - EP US)
Designated contracting state (EPC)
DE FR GB
DOCDB simple family (publication)
EP 0000169 A1 19790110; EP 0000169 B1 19811007; DE 2861127 D1 19811217; IT 1112275 B 19860113; IT 7825052 A0 19780628; JP S5412577 A 19790130; JP S5635028 B2 19810814; US 4191899 A 19800304
DOCDB simple family (application)
EP 78100194 A 19780619; DE 2861127 T 19780619; IT 2505278 A 19780628; JP 6179278 A 19780525; US 81102877 A 19770629