EP 0000316 B1 19810429 - METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES COMPRISING RECESSED SILICON OXIDE REGIONS
Title (en)
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES COMPRISING RECESSED SILICON OXIDE REGIONS
Publication
Application
Priority
US 80318277 A 19770603
Abstract (en)
[origin: US4098618A] A method of manufacturing semiconductor devices of the type wherein regions of oxide such as silicon oxide recessed or inset in a silicon substrate are formed by oxidation of the silicon with the use of a masking layer protecting locally against the oxidation. In order to prevent the formation of a projecting oxide beak under the masking layer a nitride oxidation mask is applied directly to the substrate which has been previously ion-implanted to a controlled depth and then annealed to generate a dense dislocation network array on the substrate surface to prevent mechanical stress defects which normally would occur when a nitride mask is applied directly to a substrate.
IPC 1-7
IPC 8 full level
H01L 21/265 (2006.01); H01L 21/306 (2006.01); H01L 21/316 (2006.01); H01L 21/76 (2006.01); H01L 21/318 (2006.01); H01L 21/32 (2006.01); H01L 21/322 (2006.01); H01L 21/762 (2006.01)
CPC (source: EP US)
H01L 21/02238 (2013.01 - EP US); H01L 21/02299 (2013.01 - EP US); H01L 21/26506 (2013.01 - EP US); H01L 21/31662 (2013.01 - US); H01L 21/3185 (2013.01 - US); H01L 21/32 (2013.01 - EP US); H01L 21/3221 (2013.01 - EP US); H01L 21/76213 (2013.01 - EP US); Y10S 438/924 (2013.01 - EP US); Y10S 438/966 (2013.01 - EP US)
Designated contracting state (EPC)
DE FR GB
DOCDB simple family (publication)
US 4098618 A 19780704; CA 1088217 A 19801021; DE 2860635 D1 19810806; EP 0000316 A1 19790110; EP 0000316 B1 19810429; IT 1158723 B 19870225; IT 7823833 A0 19780526; JP S542671 A 19790110; JP S6141139 B2 19860912
DOCDB simple family (application)
US 80318277 A 19770603; CA 300719 A 19780407; DE 2860635 T 19780601; EP 78430001 A 19780601; IT 2383378 A 19780526; JP 6181278 A 19780525