EP 0000317 B1 19820519 - METHOD FOR PROVIDING A SILICIDE ELECTRODE ON A SUBSTRATE SUCH AS A SEMICONDUCTOR SUBSTRATE
Title (en)
METHOD FOR PROVIDING A SILICIDE ELECTRODE ON A SUBSTRATE SUCH AS A SEMICONDUCTOR SUBSTRATE
Publication
Application
Priority
US 81191477 A 19770630
Abstract (en)
[origin: US4180596A] A method for providing on a substrate a layer of a metal silicide such as molybdenum silicide and/or tantalum silicide and/or tungsten silicide and/or rhodium silicide which includes coevaporating silicon and the respective metal onto a substrate, and then heat treating the substrate to form the metal silicide.
IPC 1-7
IPC 8 full level
H01B 13/00 (2006.01); H01L 21/28 (2006.01); H01L 21/60 (2006.01); H01L 21/285 (2006.01); H01L 21/3205 (2006.01); H01L 23/52 (2006.01); H01L 29/49 (2006.01); H01L 29/78 (2006.01)
CPC (source: EP US)
H01L 21/28061 (2013.01 - EP US); H01L 21/28518 (2013.01 - EP US); H01L 29/4933 (2013.01 - EP US); Y10S 148/14 (2013.01 - EP US); Y10S 148/147 (2013.01 - EP US)
Designated contracting state (EPC)
DE FR GB
DOCDB simple family (publication)
EP 0000317 A1 19790110; EP 0000317 B1 19820519; CA 1100648 A 19810505; DE 2861841 D1 19820708; IT 1112638 B 19860120; IT 7824502 A0 19780613; JP S5413283 A 19790131; JP S5852342 B2 19831122; US 4180596 A 19791225
DOCDB simple family (application)
EP 78430003 A 19780622; CA 301740 A 19780421; DE 2861841 T 19780622; IT 2450278 A 19780613; JP 6502378 A 19780601; US 81191477 A 19770630