EP 0000412 A2 19790124 - Semiconductor injection laser or intensifier.
Title (en)
Semiconductor injection laser or intensifier.
Title (de)
Halbleiter-Injektionslaser oder-verstärker.
Title (fr)
Laser ou amplificateur à injection à semiconducteurs.
Publication
Application
Priority
NL 7707720 A 19770712
Abstract (en)
A semiconductor laser or traveling wave intensifier having an active layer between two passive semiconductor layers, and a strip-shaped electrode geometry. According to the invention the active layer is uniform in thickness. while at least one of the passive layers within the strip-shaped geometry comprises a strip-shaped zone of deviating construction and is built up from portions having different refractive indices n, and n<sub>2</sub>. According to the invention it holds thatwherein n, is the refractive index of the portion which at least within said strip-shaped zone adjoins the active layer, d, is the thickness thereof within the strip-shaped zone, and d<sub>2</sub> is the thickness thereof beside the strip-shaped zone.
IPC 1-7
IPC 8 full level
H01S 5/22 (2006.01); H01S 5/223 (2006.01); H01S 5/00 (2006.01); H01S 5/50 (2006.01)
CPC (source: EP US)
H01S 5/22 (2013.01 - EP US); H01S 5/2231 (2013.01 - EP US); H01S 5/50 (2013.01 - EP US); H01S 5/5009 (2013.01 - EP US)
Designated contracting state (EPC)
DE FR GB NL SE
DOCDB simple family (publication)
EP 0000412 A2 19790124; EP 0000412 A3 19790207; EP 0000412 B1 19810318; CA 1124375 A 19820525; DE 2860540 D1 19810416; IT 1096919 B 19850826; IT 7825470 A0 19780707; JP S5419688 A 19790214; JP S5755309 B2 19821124; NL 7707720 A 19790116; US 4376307 A 19830308
DOCDB simple family (application)
EP 78200074 A 19780703; CA 306840 A 19780705; DE 2860540 T 19780703; IT 2547078 A 19780707; JP 8390178 A 19780710; NL 7707720 A 19770712; US 15027080 A 19800515