EP 0000472 B1 19810211 - HIGH-DENSITY INTEGRATED SEMICONDUCTOR DEVICE COMPRISING A DIODE-RESISTOR STRUCTURE
Title (en)
HIGH-DENSITY INTEGRATED SEMICONDUCTOR DEVICE COMPRISING A DIODE-RESISTOR STRUCTURE
Publication
Application
Priority
DE 2733615 A 19770726
Abstract (en)
[origin: EP0000472A1] The highly integrated semiconductor device is intended as a separating diode cooperating with selector lines of an integrated memory. The resistor (R) is of pinch-type whose pinch doping region (5) is greater than the cross sectional dimension of the resistor doping region (4). Simultaneously it forms a cathode connection doping region for the Schottky diode (D). Preferably the pinched doping region carries a connection contact (K) for the Schottky diode cathode terminal. This doped region is of identical conductivity as the surrounding semiconductor material (3), but of higher doping rate, sufficient to form an ohmic contact with a metal electrode on the region. On the resistance region (4) outside the pinch doping region is provided a metal contact (A), extending beyond the resistance region.
IPC 1-7
IPC 8 full level
G11C 11/41 (2006.01); G11C 11/40 (2006.01); G11C 11/414 (2006.01); G11C 11/416 (2006.01); H01L 21/822 (2006.01); H01L 21/8222 (2006.01); H01L 27/04 (2006.01); H01L 27/06 (2006.01); H01L 27/07 (2006.01); H01L 29/47 (2006.01); H01L 29/872 (2006.01)
CPC (source: EP US)
G11C 11/416 (2013.01 - EP US); H01L 27/0788 (2013.01 - EP US)
Designated contracting state (EPC)
DE FR GB
DOCDB simple family (publication)
EP 0000472 A1 19790207; EP 0000472 B1 19810211; DE 2733615 A1 19790201; DE 2860462 D1 19810326; JP S5424585 A 19790223; JP S5725982 B2 19820602; US 4170017 A 19791002
DOCDB simple family (application)
EP 78100195 A 19780619; DE 2733615 A 19770726; DE 2860462 T 19780619; JP 7662078 A 19780626; US 88916978 A 19780323