EP 0000545 B1 19810211 - METHOD FOR FORMING A SEMICONDUCTER DEVICE WITH SELF-ALIGNMENT
Title (en)
METHOD FOR FORMING A SEMICONDUCTER DEVICE WITH SELF-ALIGNMENT
Publication
Application
Priority
US 82099177 A 19770801
Abstract (en)
[origin: US4128439A] A method is provided for making a field effect transistor which comprises forming a layer of an ion beam masking material on the surface of a semiconductor body of one-type conductivity having at least two adjacent apertures with at least a portion of the masking layer between these apertures and in contact with the semiconductor body surface being an electrically insulative material. Then, a beam of ions of opposite-type conductivity is directed at the mask body at an energy and dosage sufficient to form two buried regions of opposite-type conductivity fully enclosed within said one-type body respectively beneath these two apertures. Finally, sufficient heat is applied so that the two buried regions diffuse upward until they extend respectively to the surface of the semiconductor body beneath the two apertures; the masking material must have a melting point above the temperature of the diffusion step.
IPC 1-7
IPC 8 full level
H01L 21/822 (2006.01); H01L 21/033 (2006.01); H01L 21/265 (2006.01); H01L 21/3215 (2006.01); H01L 27/04 (2006.01); H01L 29/08 (2006.01); H01L 29/49 (2006.01); H01L 29/78 (2006.01)
CPC (source: EP US)
H01L 21/033 (2013.01 - EP US); H01L 21/26513 (2013.01 - EP US); H01L 21/32155 (2013.01 - EP US); H01L 29/0847 (2013.01 - EP US); H01L 29/4916 (2013.01 - EP US)
Designated contracting state (EPC)
BE DE FR GB NL SE
DOCDB simple family (publication)
US 4128439 A 19781205; CA 1112374 A 19811110; DE 2860467 D1 19810326; EP 0000545 A1 19790207; EP 0000545 B1 19810211; IT 1108994 B 19851216; IT 7826098 A0 19780726; JP S5427376 A 19790301; JP S6046831 B2 19851018
DOCDB simple family (application)
US 82099177 A 19770801; CA 307067 A 19780710; DE 2860467 T 19780719; EP 78100443 A 19780719; IT 2609878 A 19780726; JP 8217578 A 19780707