EP 0000743 B1 19800917 - METHOD FOR FABRICATING TANTALUM CONTACTS ON A N-TYPE CONDUCTING SILICON SEMICONDUCTOR SUBSTRATE
Title (en)
METHOD FOR FABRICATING TANTALUM CONTACTS ON A N-TYPE CONDUCTING SILICON SEMICONDUCTOR SUBSTRATE
Publication
Application
Priority
US 82791277 A 19770826
Abstract (en)
[origin: US4215156A] A silicon semiconductor device having contacts which include tantalum. The tantalum is useful in particular for fabricating Schottky barrier diodes having a low barrier height. The method includes: precleaning the silicon substrate prior to depositing the tantalum; depositing the tantalum at low pressure and low substrate temperature to avoid oxidation of the tantalum; and sintering the contact to reduce any interfacial charges and films remaining between the silicon and tantalum. When a metal which reacts with silicon during processing, such as aluminum, is used as interconnection metallurgy, a layer of chrome must be deposited between the tantalum and aluminum.
IPC 1-7
IPC 8 full level
H01L 21/28 (2006.01); H01L 21/285 (2006.01); H01L 21/338 (2006.01); H01L 21/60 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 29/43 (2006.01); H01L 29/45 (2006.01); H01L 29/47 (2006.01); H01L 29/872 (2006.01)
CPC (source: EP US)
H01L 21/28512 (2013.01 - EP US); H01L 21/28537 (2013.01 - EP US); H01L 23/53223 (2013.01 - EP US); H01L 24/03 (2013.01 - EP US); H01L 24/05 (2013.01 - EP US); H01L 29/456 (2013.01 - EP US); H01L 29/47 (2013.01 - EP US); H01L 29/66848 (2013.01 - EP US); H01L 2224/05083 (2013.01 - EP US); H01L 2224/05171 (2013.01 - EP US); H01L 2224/05181 (2013.01 - EP US); H01L 2224/05624 (2013.01 - EP US); H01L 2224/05647 (2013.01 - EP US); H01L 2924/01005 (2013.01 - EP US); H01L 2924/01006 (2013.01 - EP US); H01L 2924/01013 (2013.01 - EP US); H01L 2924/01014 (2013.01 - EP US); H01L 2924/01022 (2013.01 - EP US); H01L 2924/01024 (2013.01 - EP US); H01L 2924/01029 (2013.01 - EP US); H01L 2924/01032 (2013.01 - EP US); H01L 2924/01033 (2013.01 - EP US); H01L 2924/01037 (2013.01 - EP US); H01L 2924/01046 (2013.01 - EP US); H01L 2924/01068 (2013.01 - EP US); H01L 2924/01072 (2013.01 - EP US); H01L 2924/01073 (2013.01 - EP US); H01L 2924/01074 (2013.01 - EP US); H01L 2924/01078 (2013.01 - EP US); H01L 2924/01079 (2013.01 - EP US); H01L 2924/01082 (2013.01 - EP US); H01L 2924/12032 (2013.01 - EP US); H01L 2924/14 (2013.01 - EP US); Y10S 438/951 (2013.01 - EP US); Y10S 438/974 (2013.01 - EP US)
C-Set (source: EP US)
Designated contracting state (EPC)
BE DE FR GB
DOCDB simple family (publication)
EP 0000743 A1 19790221; EP 0000743 B1 19800917; CA 1111570 A 19811027; DE 2860169 D1 19801218; IT 1158954 B 19870225; IT 7826099 A0 19780726; JP S5436178 A 19790316; JP S5932069 B2 19840806; US 4215156 A 19800729
DOCDB simple family (application)
EP 78100525 A 19780727; CA 307591 A 19780718; DE 2860169 T 19780727; IT 2609978 A 19780726; JP 8410378 A 19780712; US 82791277 A 19770826