EP 0000863 A1 19790307 - Temperature compensated integrated semiconductor resistor.
Title (en)
Temperature compensated integrated semiconductor resistor.
Title (de)
Temperaturkompensierter integrierter Halbleiterwiderstand.
Title (fr)
Résistance semiconductrice intégrée à compensation de température.
Publication
Application
Priority
US 82575977 A 19770818
Abstract (en)
[origin: US4229753A] A circuit technique is disclosed for compensating for changes in the resistance of an integrated circuit resistor in an epitaxial bed, which is exposed to temperature changes. The resistance of an integrated circuit resistor is a function of the temperature at which is operates. The invention is based on the recognition that the resistance of the resistor is also a function of the potential difference between the body of the resistor and the epitaxial bed itself. Temperature compensation is achieved by connecting a temperature sensing circuit to the epitaxial bed, which has a voltage output which varies inversely with respect to the temperature coefficient of resistance of the resistor. Thus, the net change in the resistance of the resistor as it undergoes a temperature change, approximates zero.
Abstract (de)
Zur Kompensation des Temperaturganges von integrierten Halbleiterwiderständen wird die Erkenntnis angewandt, dass der Wert eines Widerstandes auch eine Funktion der Potentialdifferenz zwischen dem Widerstand (8) selbst und der diesen umgebenden Epitaxieschicht 4 ist. Die Temperaturkompensation wird dadurch bewirkt, dass ein Temperaturfühler an die Epitaxieschicht angeschlossen wird und eine Kompensationsspannung liefert, welche die Potentialdifferenz gegenläufig zu dem Widerstandstemperaturkoeffizienten des Widerstands beeinflusst. Auf diese Weise wird der Widerstand (8) über einen weiten Temperaturbereich konstant gehalten.
IPC 1-7
IPC 8 full level
H01L 27/04 (2006.01); G05D 23/20 (2006.01); H01L 21/822 (2006.01); H01L 23/34 (2006.01); H01L 27/02 (2006.01); H01L 27/08 (2006.01)
CPC (source: EP US)
G05D 23/1906 (2013.01 - EP US); G05D 23/20 (2013.01 - EP US); H01L 23/34 (2013.01 - EP US); H01L 27/0211 (2013.01 - EP US); H01L 27/0802 (2013.01 - EP US); H01L 2924/0002 (2013.01 - EP US); H01L 2924/3011 (2013.01 - EP US)
Citation (search report)
- US 3700977 A 19721024 - LUNN GERALD K
- [A] US 3484658 A 19691216 - KOMATSU RYOSAKU
- [P] FR 2351505 A1 19771209 - IBM FRANCE [FR]
- [A] ELECTRONICS, vol. 48, 23-1-1975, New York: W.E. OTT: "Monolithic converter augments ac-measurement capabilities", pages 79-83
Designated contracting state (EPC)
DE FR GB
DOCDB simple family (publication)
EP 0000863 A1 19790307; EP 0000863 B1 19810715; DE 2860835 D1 19811022; JP S5432989 A 19790310; JP S5635029 B2 19810814; US 4229753 A 19801021
DOCDB simple family (application)
EP 78100173 A 19780615; DE 2860835 T 19780615; JP 8410578 A 19780712; US 82575977 A 19770818