EP 0000897 B1 19811223 - METHOD FOR PRODUCING LATERALLY ISOLATED SILICIUM AREAS
Title (en)
METHOD FOR PRODUCING LATERALLY ISOLATED SILICIUM AREAS
Publication
Application
Priority
US 82436177 A 19770815
Abstract (en)
[origin: US4104086A] A method for isolating regions of silicon involving the formation of openings that have a suitable taper in a block of silicon, thermally oxidizing the surfaces of the openings, and filling the openings with a dielectric material to isolate regions of silicon within the silicon block. The method is particularly useful wherein the openings are made through a region of silicon having a layer of a high doping conductivity.
IPC 1-7
IPC 8 full level
H01L 21/3065 (2006.01); H01L 21/308 (2006.01); H01L 21/76 (2006.01); H01L 21/762 (2006.01)
CPC (source: EP US)
H01L 21/3065 (2013.01 - EP US); H01L 21/3081 (2013.01 - EP US); H01L 21/76232 (2013.01 - EP US); Y10S 148/051 (2013.01 - EP US); Y10S 148/131 (2013.01 - EP US); Y10S 148/161 (2013.01 - EP US); Y10S 148/168 (2013.01 - EP US); Y10S 438/978 (2013.01 - EP US)
Designated contracting state (EPC)
DE FR GB
DOCDB simple family (publication)
US 4104086 A 19780801; CA 1097826 A 19810317; DE 2861453 D1 19820211; EP 0000897 A1 19790307; EP 0000897 B1 19811223; IT 1112298 B 19860113; IT 7826393 A0 19780802; JP S5432277 A 19790309; JP S6220696 B2 19870508
DOCDB simple family (application)
US 82436177 A 19770815; CA 305231 A 19780612; DE 2861453 T 19780807; EP 78100614 A 19780807; IT 2639378 A 19780802; JP 8217778 A 19780707