EP 0001030 A1 19790307 - Process for manufacturing a mask according to a given pattern on a support.
Title (en)
Process for manufacturing a mask according to a given pattern on a support.
Title (de)
Verfahren zur Herstellung einer Maske gemäss einem vorgegebenen Muster auf einem Träger.
Title (fr)
Procédé de fabrication d'un masque selon une configuration donnée sur un support.
Publication
Application
Priority
US 81175777 A 19770630
Abstract (en)
[origin: US4165395A] A high aspect ratio structure (with a large height-to-linewidth ratio) is formed on a substrate by means of two resist layers with different kinds of radiation to which they are sensitive, respectively, with an actinic radiation sensitive resist below and an electron sensitive resist above. In addition, a metallic film is shaped by means of exposure of the upper layer of resist to form a metallic mask through which the lower layer of resist is exposed. Exposure may be performed by a "subtractive" technique or an "additive" technique. In the case of the subtractive technique, the substrate is coated by a first actinic resist above which are deposited first a metallic film and then a top layer of electron resist. The top resist layer is exposed and developed and the metal layer is etched so the lower resist can be exposed and developed with the pattern formed in the metal, with the pattern shape originally exposed in the top layer of resist extending down to the substrate.
Abstract (fr)
Le support de masque (20) est d'abord revêtu par une couche (21) d'un premier matériau sensible aux rayons actiniques (du spectre visible aux rayons X) puis on forme sur cette couche, un mince film de métal (24) délimité selon une configuration déterminée grâce à une étape lithographique mettant en oeuvre une seconde couche d'un second matériau sensible aux électrons, non représentée. Le premier matériau est alors exposé à des rayons actiniques à travers les ouvertures (25) dudit film de métal ainsi délimité et ledit premier matériau est ensuite développé. Ce procédé qui combine l'électronlithographie (faculté d'exposition par calculateur) et la photolithographie (excellente définition des lignes) trouve son application dans les étapes lithographiques de la fabrication des dispositifs intégrés à semi-conducteurs notamment.
IPC 1-7
IPC 8 full level
G03F 7/26 (2006.01); G03C 5/00 (2006.01); G03F 1/68 (2012.01); G03F 7/09 (2006.01); G03F 7/095 (2006.01); G03F 7/20 (2006.01); H01J 37/317 (2006.01); H01L 21/027 (2006.01); H01L 21/302 (2006.01); H01L 21/306 (2006.01); H01L 21/3065 (2006.01); H05K 3/06 (2006.01)
CPC (source: EP US)
B82Y 10/00 (2013.01 - EP US); B82Y 40/00 (2013.01 - EP US); G03F 1/76 (2013.01 - EP US); G03F 7/095 (2013.01 - EP US); G03F 7/2022 (2013.01 - EP US); H01J 37/3174 (2013.01 - EP US); H01L 21/0274 (2013.01 - EP US); H01L 21/0277 (2013.01 - EP US); H01L 21/0278 (2013.01 - EP US); Y10S 430/143 (2013.01 - EP US)
Citation (search report)
- FR 2310633 A1 19761203 - IBM [US]
- FR 2236336 A1 19750131 - PHILIPS NV [NL]
- US 3971860 A 19760727 - BROERS ALEC N, et al
- SOLID STATE TECHNOLOGY, vol. 20, nr. 5, mai 1977, New York, (USA) G.P. HUGHES: "X-ray lithography for IC processing" pages 39-42
Designated contracting state (EPC)
DE FR GB
DOCDB simple family (publication)
EP 0001030 A1 19790307; EP 0001030 B1 19820519; DE 2861842 D1 19820708; JP S5430827 A 19790307; JP S6055825 B2 19851206; US 4165395 A 19790821
DOCDB simple family (application)
EP 78430002 A 19780622; DE 2861842 T 19780622; JP 6500378 A 19780601; US 81175777 A 19770630