EP 0004285 B1 19820811 - A METHOD OF PLASMA ETCHING SILICA AT A FASTER RATE THAN SILICON IN AN ARTICLE COMPRISING BOTH
Title (en)
A METHOD OF PLASMA ETCHING SILICA AT A FASTER RATE THAN SILICON IN AN ARTICLE COMPRISING BOTH
Publication
Application
Priority
US 88888278 A 19780321
Abstract (en)
[origin: EP0004285A1] A method of plasma etching silica at a faster rate than silicon in an article containing both silica and silicon involves using a gaseous mixture containing an unsaturated halocarbon and a saturated halocarbon. The preferred halocarbons contain fluorine. A preferred embodiment is a gaseous mixture containing C3F6 and C2F6.
IPC 1-7
IPC 8 full level
H01L 21/3065 (2006.01); H01L 21/311 (2006.01); H01L 21/302 (2006.01)
CPC (source: EP US)
H01L 21/3065 (2013.01 - EP US); H01L 21/31116 (2013.01 - EP US)
Designated contracting state (EPC)
DE FR GB
DOCDB simple family (publication)
EP 0004285 A1 19791003; EP 0004285 B1 19820811; CA 1113352 A 19811201; DE 2963520 D1 19821007; IT 1166707 B 19870506; IT 7921038 A0 19790316; JP S54128285 A 19791004; JP S5741817 B2 19820904; US 4162185 A 19790724
DOCDB simple family (application)
EP 79100510 A 19790221; CA 314409 A 19781026; DE 2963520 T 19790221; IT 2103879 A 19790316; JP 974479 A 19790201; US 88888278 A 19780321