EP 0008661 B1 19831005 - PROCESS FOR THE PRELIMINARY HEATING OF SEMICONDUCTOR BODIES IN VIEW OF SUBSEQUENTLY INCREASING THEIR INTERNAL GETTERING EFFECT
Title (en)
PROCESS FOR THE PRELIMINARY HEATING OF SEMICONDUCTOR BODIES IN VIEW OF SUBSEQUENTLY INCREASING THEIR INTERNAL GETTERING EFFECT
Publication
Application
Priority
FR 7826223 A 19780908
Abstract (en)
[origin: US4220483A] The gettering effect in the bulk of semiconductor bodies is increased by heating the bodies prior to device processing to a temperature of from 750 DEG -900 DEG C. for from 1-8 hours in order to generate oxygen precipitates in the form of clusters.
IPC 1-7
IPC 8 full level
C30B 33/00 (2006.01); H01L 21/322 (2006.01); H01L 29/167 (2006.01)
CPC (source: EP US)
C30B 33/00 (2013.01 - EP US); H01L 21/3225 (2013.01 - EP US); H01L 29/167 (2013.01 - EP US); Y10S 148/023 (2013.01 - EP); Y10S 148/024 (2013.01 - EP)
Citation (examination)
- IBM Technical Disclosure Bulletin, Vol. 19 No 12, mai 1977, pages 4618 et 4619 (S.M.Hu et al.).
- SAP Vol. 46 no. 5, mai 1975, pages 1869 à 1874 (S.M.Hu et al.).
Designated contracting state (EPC)
DE FR GB
DOCDB simple family (publication)
EP 0008661 A1 19800319; EP 0008661 B1 19831005; DE 2966258 D1 19831110; FR 2435818 A1 19800404; FR 2435818 B1 19820604; JP S5538098 A 19800317; US 4220483 A 19800902
DOCDB simple family (application)
EP 79102641 A 19790725; DE 2966258 T 19790725; FR 7826223 A 19780908; JP 11437479 A 19790907; US 6659379 A 19790814