EP 0011629 A4 19801017 - SHALLOW-HOMOJUNCTION SOLAR CELLS.
Title (en)
SHALLOW-HOMOJUNCTION SOLAR CELLS.
Title (de)
SOLARZELLEN MIT OBERFLÄCHLICHEM HOMOÜBERGANG.
Title (fr)
CELLULES SOLAIRES A HOMOJONCTION SUPERFICIELLE.
Publication
Application
Priority
US 88907878 A 19780322
Abstract (en)
[origin: WO7900813A1] Improvements in shallow-homojunction solar cells based upon a plurality of layers of a direct gap semi conductor material such as GaAs, as well as their fabrication, are disclosed. The shallow-homojunction solar cells have a n+/p/p+ structure (26, 24, 22) in which the n+ top layer (26) is limited to a thickness which permits significant carrier generation to occur in a lower semiconductor layer (24). An antireflection coating (28) is applied over the n+ top layer (26), and a particularly preferred method for applying the antireflection coating is by anodization. These solar cells can be grown on relatively inexpensive substrates, if desired, such as silicon or germanium.
IPC 1-7
IPC 8 full level
H01L 31/04 (2006.01); H01L 31/068 (2012.01)
CPC (source: EP)
H01L 31/068 (2013.01); Y02E 10/547 (2013.01)
Citation (search report)
US 3758348 A 19730911 - WHIGHAM D, et al
Designated contracting state (EPC)
DE FR GB
DOCDB simple family (publication)
WO 7900813 A1 19791018; CA 1137604 A 19821214; EP 0011629 A1 19800611; EP 0011629 A4 19801017; JP S55500168 A 19800327; SE 439079 B 19850528; SE 7909584 L 19791120
DOCDB simple family (application)
US 7900181 W 19790321; CA 324090 A 19790322; EP 79900329 A 19791023; JP 50056879 A 19790321; SE 7909584 A 19791120