Global Patent Index - EP 0015682 B1

EP 0015682 B1 19840111 - RAMAN TUBE

Title (en)

RAMAN TUBE

Publication

EP 0015682 B1 19840111 (EN)

Application

EP 80300501 A 19800221

Priority

US 1584579 A 19790227

Abstract (en)

[origin: US4239995A] Shifted Raman radiation for an all-hot Raman discharge cell is produced by external laser pumping of a metal halide medium in the cell during an afterglow period following dissociation of the metal halide medium into metal atoms and before recombination to form the original species of the metal halide medium.

IPC 1-7

H01S 3/30

IPC 8 full level

H01S 3/22 (2006.01); G02F 1/35 (2006.01); H01S 3/034 (2006.01); H01S 3/30 (2006.01)

CPC (source: EP US)

H01S 3/0346 (2013.01 - EP US); H01S 3/305 (2013.01 - EP US)

Citation (examination)

  • OPTO. SPECTROSC., vol. 39, no. 6, December 1975, Washington, US, A.M. SHUKHTIN et al.: "Lasing with cul lines using copper bromide vapor", page 681
  • IEEE JOURNAL OF QUANTUM ELECTRONICS, vol. QE-13, no. 5, May 1977, New York, US, S. GABAY et al.: "Comparison of CuC1, CuBr, and CuI as lasants for copper-vapor lasers", pages 364-366
  • OPTICS COMMUNICATIONS, vol. 26, no. 2, August 1978, Amsterdam, NL, D. COTTER et al.: "Efficient raman conversion of XeC1 excimer laser radiation in Ba vapour", pages 251-255
  • OPTICS LETTERS, vol. 3, no. 6, December 1978, New York, US, R. BURNHAM et al.: "Efficient raman conversion of XeC1-laser radiation in metal vapors", pages 215-217

Designated contracting state (EPC)

DE FR GB

DOCDB simple family (publication)

EP 0015682 A1 19800917; EP 0015682 B1 19840111; CA 1135822 A 19821116; DE 3066068 D1 19840216; JP S55117297 A 19800909; US 4239995 A 19801216

DOCDB simple family (application)

EP 80300501 A 19800221; CA 345690 A 19800214; DE 3066068 T 19800221; JP 2287480 A 19800227; US 1584579 A 19790227