EP 0021217 B1 19830713 - DYNAMIC SEMICONDUCTOR MEMORY CELL AND METHOD OF MANUFACTURING SAME
Title (en)
DYNAMIC SEMICONDUCTOR MEMORY CELL AND METHOD OF MANUFACTURING SAME
Publication
Application
Priority
DE 2926416 A 19790629
Abstract (en)
[origin: EP0021217A1] 1. A dynamic semiconductor storage cell having a storage capacitor provided with an electrode applied in insulated fashion to the boundary surface of a semiconductor body, a region which is connected to a bit line and is oppositely-doped to the semiconductor body, and a transfer gate which is connected to a word line and is applied in insulated fashion to a part of the boundary surface, said part directly adjoining said region and the semiconductor zone of the storage capacitor, which is covered by the electrode, characterized in that, below the electrode (8) therer is arranged a similarly oppositely-doped first zone (9) of the semiconductor body (1) adjoining the boundary surface (1a) ; that further zones (11, 12) are provided, which essentially run parallel to the boundary surface (1a), which are similarly doped as regards the basic doping, but have a higher doping level, and which lie beneath said region (5) and the first zone (9) ; that edge regions (13, 14) of the further zones (11, 12) lying beneath the transfer gate (6) extend to the boundary surface (1a), so that they laterally delimit the region (5) and the first zone (9) ; that beneath the transfer gate (6), a region (15) of the semiconductor body is provided adjacent to the boundary surface (1a), and which connects said edge regions (13, 14), and has a doping which is opposite to the basic doping ; and that the parts of the edge regions (13, 14) which lie in the boundary surface (1a) form a two-part transfer channel between the region (5) and the adjoining first zone (9).
IPC 1-7
IPC 8 full level
H01L 27/10 (2006.01); G11C 11/404 (2006.01); H01L 29/78 (2006.01); H10B 12/00 (2023.01)
CPC (source: EP)
G11C 11/404 (2013.01); H10B 12/01 (2023.02); H10B 12/30 (2023.02)
Designated contracting state (EPC)
FR GB
DOCDB simple family (publication)
EP 0021217 A1 19810107; EP 0021217 B1 19830713; CA 1149512 A 19830705; DE 2926416 A1 19810122; JP S567469 A 19810126
DOCDB simple family (application)
EP 80103197 A 19800609; CA 354835 A 19800626; DE 2926416 A 19790629; JP 8579880 A 19800624