EP 0031095 A3 19820428 - PROCESS FOR PRODUCING A DOUBLE LAYER WITH HETERO-JUNCTION FOR THE MEMORY ELECTRODE OF AN IMAGE REGISTRATION DEVICE
Title (en)
PROCESS FOR PRODUCING A DOUBLE LAYER WITH HETERO-JUNCTION FOR THE MEMORY ELECTRODE OF AN IMAGE REGISTRATION DEVICE
Publication
Application
Priority
DE 2951482 A 19791220
Abstract (en)
[origin: US4359488A] A double layer having a hetero-junction interface for a storage electrode of an electro-optical camera device is produced by vacuum vapor deposition of n-conductive cadmium selenide or cadmium sulfo-selenide onto a n+-conductive signal electrode layer comprised of tin oxide. The cadmium material to be vapor deposited is admixed with a small amount of a glass additive, such as boron oxide, the admixture sintered in vacuum and thereafter the cadmium material is vapor-deposited onto the signal electrode without spattering. The resultant hetero-junction is substantially free of metallic cadmium and such double layer is particularly useful in a Vidicon target.
IPC 1-7
IPC 8 full level
H01L 31/04 (2006.01); G03G 5/08 (2006.01); H01J 9/233 (2006.01); H01J 29/36 (2006.01); H01J 29/45 (2006.01); H01L 21/203 (2006.01); H01L 31/18 (2006.01)
CPC (source: EP US)
H01J 9/233 (2013.01 - EP US); H01J 29/456 (2013.01 - EP US)
Citation (search report)
- [A] DE 1514923 A1 19700219 - TOKIO SHIBAMRA ELECTRIC CO LTD
- [A] DE 2415466 A1 19741107 - MATSUSHITA ELECTRIC IND CO LTD
- [A] DE 2527528 A1 19760108 - JAPAN BROADCASTING CORP, et al
- [A] US 2908835 A 19591013 - WEIMER PAUL K
Designated contracting state (EPC)
FR GB IT SE
DOCDB simple family (publication)
EP 0031095 A2 19810701; EP 0031095 A3 19820428; EP 0031095 B1 19841205; DE 2951482 A1 19810702; DE 2951482 C2 19830105; JP S56116678 A 19810912; JP S6146069 B2 19861011; US 4359488 A 19821116
DOCDB simple family (application)
EP 80107832 A 19801211; DE 2951482 A 19791220; JP 17964580 A 19801217; US 21236780 A 19801203