Global Patent Index - EP 0032492 A1

EP 0032492 A1 19810729 - SILICO-THERMAL PROCESS FOR OBTAINING, IN LADLE, ALLOYS BASED ON MANGANESE AND SILICIUM.

Title (en)

SILICO-THERMAL PROCESS FOR OBTAINING, IN LADLE, ALLOYS BASED ON MANGANESE AND SILICIUM.

Title (de)

VERFAHREN ZUR HERSTELLUNG, IN DER GIESSPFANNE, VON SILIKOTHERMISCHEN LEGIERUNGEN AUF DER BASIS VON MANGAN UND SILICIUM.

Title (fr)

PROCEDE D'OBTENTION SILICO-THERMIQUE, EN POCHE, D'ALLIAGES A BASE DE MANGANESE ET DE SILICIUM.

Publication

EP 0032492 A1 19810729 (FR)

Application

EP 80901328 A 19810209

Priority

FR 7918985 A 19790717

Abstract (en)

[origin: WO8100262A1] An oxidized liquid slag coming most of ten from prior metallurgic operations and still containing from 10 to 40% of manganese as MnO, is treated, under stirring, by a reducing alloy based on silicium (silicium content at least equals 60% and, preferably, at least 70%). A slag substantially depleated of manganese is obtained and a metal containing more than 60% and, usually, more than 70% of manganese, and from 5 to 40% and preferably from 10 to 35% of silicium is provided.

Abstract (fr)

Procede d'obtention silico-thermique en poche d'alliages a base de manganese et de silicium. On traite, sous agitation, par un alliage reducteur a base de silicium (teneur en silicium au moins egale a 60% et, de preference, au moins egale a 70%), un laitier liquide oxyde, provenant, le plus souvent, d'operations metallurgiques anterieures, et contenant encore de 10 a 40% de manganese a l'etat de MnO. On obtient ainsi un laitier sensiblement epuise en manganese et un metal contenant plus de 60% et, generalement plus de 70% de manganese, et de 5 a 40% et, de preference, de 10 a 35% de silicium.

IPC 1-7

C22C 28/00; C22C 35/00

IPC 8 full level

C22B 5/04 (2006.01); C22C 1/02 (2006.01); C22C 28/00 (2006.01); C22B 47/00 (2006.01); C22C 35/00 (2006.01)

CPC (source: EP US)

C22B 5/04 (2013.01 - EP US); C22C 28/00 (2013.01 - EP US)

Designated contracting state (EPC)

DE FR

DOCDB simple family (publication)

WO 8100262 A1 19810205; AU 533104 B2 19831027; AU 6121980 A 19810213; BR 8008759 A 19810505; CA 1145164 A 19830426; EP 0032492 A1 19810729; ES 493421 A0 19810516; ES 8105037 A1 19810516; FR 2461759 A1 19810206; FR 2461759 B1 19840928; IT 1131695 B 19860625; IT 8023483 A0 19800716; JP S56500891 A 19810702; OA 06725 A 19820630; PT 71565 A 19800801; US 4363657 A 19821214; ZA 804307 B 19810729

DOCDB simple family (application)

FR 8000121 W 19800715; AU 6121980 A 19800715; BR 8008759 A 19800715; CA 356295 A 19800716; EP 80901328 A 19810209; ES 493421 A 19800716; FR 7918985 A 19790717; IT 2348380 A 19800716; JP 50162980 A 19800715; OA 57302 A 19810117; PT 7156580 A 19800716; US 25352181 A 19810306; ZA 804307 A 19800716