EP 0034929 B1 19840509 - PROTECTION OF A MISFET OF A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
Title (en)
PROTECTION OF A MISFET OF A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
Publication
Application
Priority
JP 2143180 A 19800222
Abstract (en)
[origin: EP0034929A1] Protection circuitry is provided to protect a MISFET, particularly a short-channel MISFET, from the punch-through phenomenon. To protect a MISFET QE1 a protection circuit having a gate controlled diode GCD is connected to provide a by-pass path for excessive voltage charges which would otherwise pass from a high voltage power supply terminal VDD to the drain of the MISFET QE1. GCD has a breakdown voltage, set by applying a predetermined gate voltage Vg to a gate thereof, less than a punch-through voltage of the MISFET QE1. When an excessive voltage is applied which would otherwise cause a punch-through phenomenon in QE1, CGD breaks down first to provide a by-pass charge path and thus protect the MISFET QE1.
IPC 1-7
IPC 8 full level
H03F 1/52 (2006.01); H01L 27/02 (2006.01); H01L 27/06 (2006.01); H01L 29/78 (2006.01); H02H 7/20 (2006.01); H03F 1/42 (2006.01)
CPC (source: EP)
H01L 27/0251 (2013.01)
Designated contracting state (EPC)
DE FR GB
DOCDB simple family (publication)
EP 0034929 A1 19810902; EP 0034929 B1 19840509; DE 3163450 D1 19840614; JP S56118371 A 19810917
DOCDB simple family (application)
EP 81300712 A 19810220; DE 3163450 T 19810220; JP 2143180 A 19800222