EP 0037244 A2 19811007 - Method for fabricating a solid-state imaging device using photoconductive film.
Title (en)
Method for fabricating a solid-state imaging device using photoconductive film.
Title (de)
Verfahren zur Herstellung einer Festkörper-Bildaufnahmevorrichtung mit einer photoleitenden Schicht.
Title (fr)
Procédé de fabrication d'un dispositif de formation d'image semiconducteur utilisant un film photoconducteur.
Publication
Application
Priority
JP 3746380 A 19800326
Abstract (en)
A solid-state imaging device comprises a scanner IC having a two-dimensional matrix of switching transistors (17), on top of which are deposited a photoconductive film (28) and a transparent electrode (31). The photoconductive film is deposited (29) through an opening (25) in a shield plate or mask plate (26), so that it is not deposited over a scanning shift register (16). The transparent electrode (31) is then formed on top of the photoconductive film, either through the same or a different shield plate, or by photo-etching. Voltages applied to the transparent electrode (31) therefore do not affect the shift register (16).
IPC 1-7
IPC 8 full level
H01L 27/14 (2006.01); H01L 27/146 (2006.01); H01L 31/18 (2006.01); H04N 5/335 (2006.01); H04N 5/369 (2011.01); H04N 5/372 (2011.01); H04N 5/374 (2011.01)
CPC (source: EP US)
H01L 27/14665 (2013.01 - EP US)
Designated contracting state (EPC)
DE FR GB NL
DOCDB simple family (publication)
US 4364973 A 19821221; CA 1153091 A 19830830; DE 3171772 D1 19850919; EP 0037244 A2 19811007; EP 0037244 A3 19820908; EP 0037244 B1 19850814; JP S56134783 A 19811021; JP S5928065 B2 19840710
DOCDB simple family (application)
US 24773781 A 19810326; CA 373948 A 19810326; DE 3171772 T 19810325; EP 81301283 A 19810325; JP 3746380 A 19800326