EP 0039736 A4 19830406 - CONDUCTOR-INSULATOR SEMICONDUCTOR DEVICES AND METHODS FOR MAKING THE SAME.
Title (en)
CONDUCTOR-INSULATOR SEMICONDUCTOR DEVICES AND METHODS FOR MAKING THE SAME.
Title (de)
LEITER-ISOLATOR-HALBLEITERVORRICHTUNGEN UND VERFAHREN ZUR HERSTELLUNG.
Title (fr)
DISPOSITIFS CONDUCTEUR-ISOLANT-SEMICONDUCTEUR ET LEUR PROCEDE DE FABRICATION.
Publication
Application
Priority
US 9412179 A 19791114
Abstract (en)
[origin: WO8101485A1] A pair of narrow channel IGFET devices (10A, 10B) having separate insulated gate electrode structures (19A, 19B) formed over narrow channel regions (28A, 28B) of a substrate (11) flanking a central enhancement region (27). Methods of forming the narrow channel regions using a single photolithography step and forming separate gate electrode structures overlying each using alternative processes, each generally involving two photolithography steps, are set forth.
IPC 1-7
H01L 29/78; H01L 27/02; H01L 29/34; H01L 29/06; H01G 7/00; B44C 1/22
IPC 8 full level
H01L 21/28 (2006.01); H01L 21/8234 (2006.01); H01L 27/08 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01)
CPC (source: EP)
H01L 21/823456 (2013.01); H01L 21/823462 (2013.01); H01L 29/40114 (2019.07); H01L 29/7838 (2013.01)
Citation (search report)
- DE 2911726 A1 19791011 - NCR CO
- FR 2137592 A1 19721229 - MATSUSHITA ELECTRIC IND CO LTD
- FR 2321194 A1 19770311 - NIPPON TELEGRAPH & TELEPHONE [JP]
- US 4033026 A 19770705 - PASHLEY RICHARD D
Designated contracting state (EPC)
DE GB NL
DOCDB simple family (publication)
WO 8101485 A1 19810528; EP 0039736 A1 19811118; EP 0039736 A4 19830406; JP S56501509 A 19811015
DOCDB simple family (application)
US 8001523 W 19801112; EP 80902383 A 19801112; JP 50015780 A 19801112