EP 0045181 B1 19850515 - HIGH ELECTRON MOBILITY HETEROJUNCTION SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING
Title (en)
HIGH ELECTRON MOBILITY HETEROJUNCTION SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING
Publication
Application
Priority
JP 10342280 A 19800728
Abstract (en)
[origin: EP0045181A2] In a high electron mobility heterojunction semiconductor device a heterojunction is formed between an n-type AlGaAs layer 5 and an undoped GaAs layer 4. An undoped AlGaAs layer 3 is tormed between layer 6 and the device substrate 1. <??>The layer 3 prevents migration of impurities from the substrate 1 during heat treatment in the manufacture of the device, acts as a buffer layer, and provides a test layer for setting up optimum manufacturing conditions before formation of n-type AlGaAs layer 5.
IPC 1-7
IPC 8 full level
H01L 21/203 (2006.01); H01L 29/778 (2006.01)
CPC (source: EP US)
H01L 21/02395 (2013.01 - EP US); H01L 21/02463 (2013.01 - EP US); H01L 21/02546 (2013.01 - EP US); H01L 21/02631 (2013.01 - EP US); H01L 29/7783 (2013.01 - EP US)
Citation (examination)
APPLIED PHYSICS LETTERS, vol. 37, no. 9, 1 november 1980, New York, S. HIYAMIZU et al. "High mobility of two-dimensional electrons at the GaAs/n-A1GaAs heterojunction interface"
Designated contracting state (EPC)
DE FR GB NL
DOCDB simple family (publication)
EP 0045181 A2 19820203; EP 0045181 A3 19820929; EP 0045181 B1 19850515; DE 3170497 D1 19850620; JP S5728322 A 19820216; US 4799088 A 19890117
DOCDB simple family (application)
EP 81303365 A 19810723; DE 3170497 T 19810723; JP 10342280 A 19800728; US 28686381 A 19810727