EP 0049046 B1 19850403 - PHOTORECEPTOR CONSTRUCTION
Title (en)
PHOTORECEPTOR CONSTRUCTION
Publication
Application
Priority
US 19042380 A 19800925
Abstract (en)
[origin: EP0049046A1] Thin photoconductive insulator layers are desirably used because of the reduced amount of materials necessary and their enhanced ability for light transmissivity. However, the thin construction tends to reduce the amount of charge that such a photoconductive layer can support. The use of a combined porous (14) and non-porous (18) barrier/charge transport layer below said photoconductive insulator layer (20) enables higher levels of charging in a photoconductive construction.
IPC 1-7
IPC 8 full level
G03G 5/08 (2006.01); G03G 5/00 (2006.01); G03G 5/047 (2006.01); G03G 5/14 (2006.01)
CPC (source: EP)
G03G 5/047 (2013.01); G03G 5/142 (2013.01)
Designated contracting state (EPC)
AT DE FR GB IT NL
DOCDB simple family (publication)
EP 0049046 A1 19820407; EP 0049046 B1 19850403; AT E12552 T1 19850415; AU 545897 B2 19850808; AU 7564681 A 19820401; BR 8106109 A 19820615; CA 1166502 A 19840501; DE 3169687 D1 19850509; JP S5788458 A 19820602
DOCDB simple family (application)
EP 81303874 A 19810825; AT 81303874 T 19810825; AU 7564681 A 19810924; BR 8106109 A 19810924; CA 383874 A 19810814; DE 3169687 T 19810825; JP 15190881 A 19810925