EP 0051826 A3 19830720 - METHOD OF PRODUCING THICK FILM RESISTOR ELEMENT OF ACCURATE RESISTANCE
Title (en)
METHOD OF PRODUCING THICK FILM RESISTOR ELEMENT OF ACCURATE RESISTANCE
Publication
Application
Priority
JP 15579180 A 19801107
Abstract (en)
[origin: EP0051826A2] In producing a thick film resistor element (12) having a predetermined resistance by the steps of applying a conducting paste to a substrate (10) to form a desirably patterned paste layer and then firing the substrate (10) to sinter the metal powder contained in the applied paste, the paste-applying and firing steps are performed such that the sintered thick film (12) has a provisional resistance lower than, e. g. 70-85% of, the predetermined resistance, and an alternating voltage which is higher than a maximum voltage to be applied to the thick film resistor element (12) in its practical use is applied to the sintered thick film (12) so as to increase its resistance up to the predetermined resistance. By this method the percentage of acceptable products in mass production can be greatly increased.
IPC 1-7
IPC 8 full level
H01C 17/065 (2006.01); H01C 17/26 (2006.01)
CPC (source: EP)
H01C 17/065 (2013.01); H01C 17/267 (2013.01)
Citation (search report)
- [X] US 3676633 A 19720711 - MINO ALFONSO DI
- [A] US 3408274 A 19681029 - HOFFMAN LEWIS C
- [A] US 3603768 A 19710907 - IRELAND JOHN W, et al
- [A] FR 2137182 A2 19721229 - COMMISSARIAT ENERGIE ATOMIQUE
- [X] 21ST ELECTRONIC COMPONENTS CONFERENCE, 10th-12th May 1971, pages 504-511, Washington D.C. (USA);
Designated contracting state (EPC)
DE FR GB
DOCDB simple family (publication)
EP 0051826 A2 19820519; EP 0051826 A3 19830720; EP 0051826 B1 19860205; DE 3173741 D1 19860320; JP S5780708 A 19820520
DOCDB simple family (application)
EP 81109284 A 19811029; DE 3173741 T 19811029; JP 15579180 A 19801107