EP 0055331 A3 19830518 - METHOD OF TRIMMING THIN METAL RESISTORS
Title (en)
METHOD OF TRIMMING THIN METAL RESISTORS
Publication
Application
Priority
US 22169580 A 19801231
Abstract (en)
[origin: EP0055331A2] A thin metal film resistor (15) of a capacitative graphic tablet is trimmed to make the resistor linear within about 0.25%. Alternating voltage is applied along the resistor by a source (40). The resistance of the resistor is measured at discrete points by a capacitative probe (34) and the resistance readings are stored in a data processor (45). A profile is calculated in the processor from the stored readings and a trim operation is made by an electro-erosion apparatus.
IPC 1-7
IPC 8 full level
G01R 27/02 (2006.01); H01C 17/22 (2006.01); H01C 17/24 (2006.01)
CPC (source: EP)
H01C 17/22 (2013.01); H01C 17/2408 (2013.01)
Citation (search report)
- [A] DE 2344504 A1 19750313 - SIEMENS AG
- [A] GB 1149775 A 19690423 - ASSOCIATED SEMICONDUCTOR MFT [GB]
- [AD] US 4087625 A 19780502 - DYM HERBERT, et al
- [AD] FR 2376399 A1 19780728 - IBM [US]
- [A] IBM TECHNICAL DISLCOSURE BULLETIN, vol. 23, no. 2, July 1980, pages 666-667, New York (USA);
Designated contracting state (EPC)
DE FR GB IT
DOCDB simple family (publication)
EP 0055331 A2 19820707; EP 0055331 A3 19830518; EP 0055331 B1 19850515; DE 3170519 D1 19850620; JP S57121201 A 19820728; JP S6117124 B2 19860506
DOCDB simple family (application)
EP 81107584 A 19810923; DE 3170519 T 19810923; JP 16654881 A 19811020