EP 0060205 B1 19861015 - LOW TEMPERATURE MELTING BINARY GLASSES FOR LEVELING SURFACES OF INTEGRATED CIRCUITS CONTAINING ISOLATION GROOVES
Title (en)
LOW TEMPERATURE MELTING BINARY GLASSES FOR LEVELING SURFACES OF INTEGRATED CIRCUITS CONTAINING ISOLATION GROOVES
Publication
Application
Priority
US 24398781 A 19810316
Abstract (en)
[origin: EP0060205A2] An integrated circuit structure comprises a plurality of islands of semiconductor material (16-1 through 16-5) each island being separated from adjacent islands by a groove formed in annular shape around said island to laterally define the dimensions of each such island, an oxide (12, 14 and 15) formed over the surface of said grooves (13-1 through 13-6) and selected glass (15) deposited on said oxide (14) in the grooves and over the top surface of said device, said glass having the property that it melts and flows at a temperature beneath the temperature at which dopants in the islands of semiconductor material substantially redistribute, said selected glass (15) having a substantially flat top surface thereby to give said structure a substantially flat top surface.
IPC 1-7
IPC 8 full level
H01L 21/76 (2006.01); H01L 21/3105 (2006.01); H01L 21/316 (2006.01); H01L 21/762 (2006.01); H01L 21/768 (2006.01); H01L 23/31 (2006.01)
CPC (source: EP US)
H01L 21/02126 (2013.01 - EP US); H01L 21/02271 (2013.01 - EP US); H01L 21/3105 (2013.01 - EP); H01L 21/76224 (2013.01 - EP); H01L 23/3178 (2013.01 - EP); H01L 21/02129 (2013.01 - EP); H01L 21/0217 (2013.01 - EP US); H01L 2924/0002 (2013.01 - EP)
C-Set (source: EP)
Designated contracting state (EPC)
DE FR GB IT NL
DOCDB simple family (publication)
EP 0060205 A2 19820915; EP 0060205 A3 19830223; EP 0060205 B1 19861015; CA 1196428 A 19851105; DE 3273863 D1 19861120; JP H0666311 B2 19940824; JP S57162348 A 19821006
DOCDB simple family (application)
EP 82400448 A 19820312; CA 398377 A 19820315; DE 3273863 T 19820312; JP 3961782 A 19820315