EP 0060699 A3 19831019 - METHOD OF MANUFACTURING PHOTOSENSORS
Title (en)
METHOD OF MANUFACTURING PHOTOSENSORS
Publication
Application
Priority
- JP 3531381 A 19810313
- JP 16720881 A 19811021
Abstract (en)
[origin: EP0060699A2] A method of manufacturing photosensors comprises the steps of forming a photoconductor film made chiefly of silicon and containing hydrogen on a desired substrate, forming a transpartent conductive film on the photo-conductor film by sputtering, and heating the photosensor having the sputtered transparent conductive film at 140 °C to 280 °C. This heat treatment improves the photo-response speed.
IPC 1-7
IPC 8 full level
H01L 31/10 (2006.01); H01L 27/146 (2006.01)
CPC (source: EP US)
H01L 27/14603 (2013.01 - EP US); H01L 27/14621 (2013.01 - EP US); H01L 27/14665 (2013.01 - EP US); H01L 27/14692 (2013.01 - EP US)
Citation (search report)
- [Y] FR 2345810 A1 19771021 - RCA CORP [US]
- [YP] EP 0040076 A2 19811118 - HITACHI LTD [JP]
- [Y] US 3979240 A 19760907 - GHEZZO MARIO
- [E] EP 0053946 A2 19820616 - FUJI XEROX CO LTD [JP]
- [A] GB 2014783 A 19790830 - MATSUSHITA ELECTRIC IND CO LTD
- [A] IEEE JOURNAL OF SOLID-STATE CIRCUITS, vol. SC-13, no. 1, February 1978, pages 16-23, New York, (USA)
Designated contracting state (EPC)
DE FR GB NL
DOCDB simple family (publication)
EP 0060699 A2 19820922; EP 0060699 A3 19831019; EP 0060699 B1 19870729; CA 1168739 A 19840605; DE 3276889 D1 19870903; KR 860000160 B1 19860227; US 4412900 A 19831101
DOCDB simple family (application)
EP 82301284 A 19820312; CA 398275 A 19820312; DE 3276889 T 19820312; KR 820001078 A 19820313; US 35707682 A 19820311