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EP 0061350 B1 19860917 - METHOD OF FORMING PATTERN

Title (en)

METHOD OF FORMING PATTERN

Publication

EP 0061350 B1 19860917 (EN)

Application

EP 82301537 A 19820324

Priority

JP 4231781 A 19810325

Abstract (en)

[origin: EP0061350A1] A method of forming a pattern is disclosed in which, after a resist pattern formed on a workpiece has been implanted with an ion, dry etching is carried out while using the ion-implanted resist pattern as a mask. The resistance of the resist pattern to dry etching is greatly improved by the ion implantation, and therefore a fine, accurate pattern can be formed.

IPC 1-7

H01L 21/308; H05K 3/00; G03F 7/26

IPC 8 full level

H01L 21/302 (2006.01); G03F 7/40 (2006.01); H01L 21/027 (2006.01); H01L 21/3065 (2006.01)

CPC (source: EP)

G03F 7/40 (2013.01)

Designated contracting state (EPC)

DE FR GB NL

DOCDB simple family (publication)

EP 0061350 A1 19820929; EP 0061350 B1 19860917; DE 3273273 D1 19861023; JP S57157523 A 19820929

DOCDB simple family (application)

EP 82301537 A 19820324; DE 3273273 T 19820324; JP 4231781 A 19810325