EP 0061855 A1 19821006 - Method for manufacturing semiconductor device.
Title (en)
Method for manufacturing semiconductor device.
Title (de)
Verfahren zur Herstellung eines Halbleiterbauelements.
Title (fr)
Procédé de fabrication d'un élément semiconducteur.
Publication
Application
Priority
- JP 4155581 A 19810320
- JP 4155881 A 19810320
- JP 15127881 A 19810924
- JP 15519881 A 19810930
Abstract (en)
[origin: US4471525A] Disclosed is a method for manufacturing a semiconductor device of high reliability, high performance and high integration with high yield. The method of this invention has the steps of forming at least one groove in a semiconductor substrate, forming a non-single-crystalline semiconductor film to cover an entire surface of the semiconductor substrate including an inner surface of the groove, selectively etching the non-single-crystalline semiconductor film so as to leave the non-single-crystalline semiconductor film on at least a side wall of the groove, and forming an oxide isolation layer in the groove by thermal oxidation.
IPC 1-7
IPC 8 full level
H01L 21/32 (2006.01); H01L 21/321 (2006.01); H01L 21/762 (2006.01)
CPC (source: EP US)
H01L 21/32 (2013.01 - EP US); H01L 21/321 (2013.01 - EP US); H01L 21/76205 (2013.01 - EP US); H01L 21/76208 (2013.01 - EP US); H01L 21/76224 (2013.01 - EP US); H01L 21/76227 (2013.01 - EP US); Y10S 438/944 (2013.01 - EP US)
Citation (search report)
- US 4222792 A 19800916 - LEVER REGINALD F, et al
- PATENT ABSTRACTS OF JAPAN Vol. 3, No. 38, 30 March 1979, page 45 E101; & JP-A-54 016 189
- IBM Technical Disclosure Bulletin, Vol. 22, No. 10, March 1980, New York D.M. KENNEY "Self-Aligned U-Groove Gates for Field-Effect Transistors" pages 4448 to 4449 * whole document *
- PATENT ABSTRACTS OF JAPAN, Vol. 3, No. 22, 24. February 1979, page 35 E93; & JP-A-54 000 589
- IBM Technical Disclosure Bulletin, Vol. 22, No. 11, April 1980, New York R.D. ISAAC "Fabrication Process for Full ROX Isolation without a Bird's Beak" pages 5148 to 5151 * page 5150, third to fifth paragraphs *
Designated contracting state (EPC)
DE FR GB NL
DOCDB simple family (publication)
EP 0061855 A1 19821006; EP 0061855 B1 19850814; DE 3265339 D1 19850919; US 4471525 A 19840918
DOCDB simple family (application)
EP 82301254 A 19820311; DE 3265339 T 19820311; US 35948582 A 19820318