Global Patent Index - EP 0061855 A1

EP 0061855 A1 19821006 - Method for manufacturing semiconductor device.

Title (en)

Method for manufacturing semiconductor device.

Title (de)

Verfahren zur Herstellung eines Halbleiterbauelements.

Title (fr)

Procédé de fabrication d'un élément semiconducteur.

Publication

EP 0061855 A1 19821006 (EN)

Application

EP 82301254 A 19820311

Priority

  • JP 4155581 A 19810320
  • JP 4155881 A 19810320
  • JP 15127881 A 19810924
  • JP 15519881 A 19810930

Abstract (en)

[origin: US4471525A] Disclosed is a method for manufacturing a semiconductor device of high reliability, high performance and high integration with high yield. The method of this invention has the steps of forming at least one groove in a semiconductor substrate, forming a non-single-crystalline semiconductor film to cover an entire surface of the semiconductor substrate including an inner surface of the groove, selectively etching the non-single-crystalline semiconductor film so as to leave the non-single-crystalline semiconductor film on at least a side wall of the groove, and forming an oxide isolation layer in the groove by thermal oxidation.

IPC 1-7

H01L 21/76

IPC 8 full level

H01L 21/32 (2006.01); H01L 21/321 (2006.01); H01L 21/762 (2006.01)

CPC (source: EP US)

H01L 21/32 (2013.01 - EP US); H01L 21/321 (2013.01 - EP US); H01L 21/76205 (2013.01 - EP US); H01L 21/76208 (2013.01 - EP US); H01L 21/76224 (2013.01 - EP US); H01L 21/76227 (2013.01 - EP US); Y10S 438/944 (2013.01 - EP US)

Citation (search report)

  • US 4222792 A 19800916 - LEVER REGINALD F, et al
  • PATENT ABSTRACTS OF JAPAN Vol. 3, No. 38, 30 March 1979, page 45 E101; & JP-A-54 016 189
  • IBM Technical Disclosure Bulletin, Vol. 22, No. 10, March 1980, New York D.M. KENNEY "Self-Aligned U-Groove Gates for Field-Effect Transistors" pages 4448 to 4449 * whole document *
  • PATENT ABSTRACTS OF JAPAN, Vol. 3, No. 22, 24. February 1979, page 35 E93; & JP-A-54 000 589
  • IBM Technical Disclosure Bulletin, Vol. 22, No. 11, April 1980, New York R.D. ISAAC "Fabrication Process for Full ROX Isolation without a Bird's Beak" pages 5148 to 5151 * page 5150, third to fifth paragraphs *

Designated contracting state (EPC)

DE FR GB NL

DOCDB simple family (publication)

EP 0061855 A1 19821006; EP 0061855 B1 19850814; DE 3265339 D1 19850919; US 4471525 A 19840918

DOCDB simple family (application)

EP 82301254 A 19820311; DE 3265339 T 19820311; US 35948582 A 19820318