EP 0066926 B1 19850213 - SEMICONDUCTOR ELECTRON EMITTING DEVICE WHOSE ACTIVE LAYER HAS A DOPING GRADIENT
Title (en)
SEMICONDUCTOR ELECTRON EMITTING DEVICE WHOSE ACTIVE LAYER HAS A DOPING GRADIENT
Publication
Application
Priority
FR 8110993 A 19810603
Abstract (en)
[origin: US4518980A] An electron emitting device including an active semiconductor layer having a surface from which electrons are emitted. The layer is doped with impurity atoms at a density which decreases with distance from the surface.
IPC 1-7
IPC 8 full level
H01J 1/30 (2006.01); H01J 1/308 (2006.01); H01J 1/32 (2006.01); H01J 1/34 (2006.01)
CPC (source: EP US)
H01J 1/32 (2013.01 - EP US); H01J 1/34 (2013.01 - EP US); H01J 2201/3423 (2013.01 - EP US)
Citation (examination)
- US 3959038 A 19760525 - GUTIERREZ WILLIAM A, et al
- FR 2300413 A1 19760903 - LABO ELECTRONIQUE PHYSIQUE [FR]
Designated contracting state (EPC)
DE FR GB
DOCDB simple family (publication)
EP 0066926 A1 19821215; EP 0066926 B1 19850213; DE 3262303 D1 19850328; FR 2507386 A1 19821210; FR 2507386 B1 19840504; JP H0411973 B2 19920303; JP S57210539 A 19821224; US 4518980 A 19850521
DOCDB simple family (application)
EP 82200648 A 19820527; DE 3262303 T 19820527; FR 8110993 A 19810603; JP 9227582 A 19820601; US 38063382 A 19820521