Global Patent Index - EP 0070809 A2

EP 0070809 A2 19830126 - Adjustment to desired value (trimming) on thin film resistors by ion sputtering.

Title (en)

Adjustment to desired value (trimming) on thin film resistors by ion sputtering.

Title (de)

Abgleich von Dünnschichtwiderständen durch Ionenzerstäubung.

Title (fr)

Ajustage de résistances en couche mince par pulvérisation à l'aide d'un faisceau d'ions.

Publication

EP 0070809 A2 19830126 (EN)

Application

EP 82830171 A 19820615

Priority

IT 4893281 A 19810720

Abstract (en)

A technique for adjusting to the desired value, thin film integrated resistors is made known. This method consists in exposing a resistor, whose thickness is greater than that necessary for the desired resistance, to ionic sputtering of the resistive material until a the resistor thickness is such as to correspond to the desired electric resistance. Ion-sputter etching is realised iether by means of a plasma or by means of an ion-gun.

IPC 1-7

H01C 17/24

IPC 8 full level

H01C 17/24 (2006.01)

CPC (source: EP)

H01C 17/2404 (2013.01)

Designated contracting state (EPC)

DE FR GB NL SE

DOCDB simple family (publication)

EP 0070809 A2 19830126; EP 0070809 A3 19830713; IT 1171401 B 19870610; IT 8148932 A0 19810720

DOCDB simple family (application)

EP 82830171 A 19820615; IT 4893281 A 19810720