EP 0071241 B1 19851002 - SUBSTANTIALLY PORE-FREE POLYCRYSTALLINE SILICON CARBIDE ARTICLES PRODUCED BY HOT ISOSTATIC PRESSING
Title (en)
SUBSTANTIALLY PORE-FREE POLYCRYSTALLINE SILICON CARBIDE ARTICLES PRODUCED BY HOT ISOSTATIC PRESSING
Publication
Application
Priority
DE 3129633 A 19810728
Abstract (en)
[origin: CA1192384A] The invention is substantially pore-free shaped articles which consist essentially of polycrystalline .alpha. - or .beta. -silicon carbide in the form of a single-phase homogeneous microstructure having grain sizes not exceeding 8 .mu.m, and which are manufactured from SiC powder, without the concomitant use of sintering aides, by isostatic hot-pressing in a vacuum-tight casing at temperatures of from about 1900.degree.C to 2300.degree.C and at pressures of from about 100 to 400 MPa. The SiC starting materials have .alpha.- and/or .beta. -SiC powders having a total content of metallic impurities not exceeding 0.1% by weight and a particle size of 4.mu.m and finer.
IPC 1-7
IPC 8 full level
C04B 35/56 (2006.01); C04B 35/565 (2006.01); C04B 35/575 (2006.01); C04B 35/64 (2006.01); C04B 35/645 (2006.01)
CPC (source: EP US)
C04B 35/575 (2013.01 - EP US); C04B 35/6455 (2013.01 - EP US)
Designated contracting state (EPC)
AT BE CH DE FR GB IT LI NL SE
DOCDB simple family (publication)
EP 0071241 A2 19830209; EP 0071241 A3 19830810; EP 0071241 B1 19851002; AT E15881 T1 19851015; CA 1192384 A 19850827; DE 3129633 A1 19830217; DE 3266697 D1 19851107; JP H0246540 B2 19901016; JP S589880 A 19830120; US 4564601 A 19860114
DOCDB simple family (application)
EP 82106773 A 19820727; AT 82106773 T 19820727; CA 407462 A 19820716; DE 3129633 A 19810728; DE 3266697 T 19820727; JP 7468382 A 19820506; US 64602284 A 19840829