EP 0075695 B1 19870107 - BIDIMENSINAL HIGH-DENSITY IMAGE SENSOR WITH PHOTOCONDUCTOR LAYER
Title (en)
BIDIMENSINAL HIGH-DENSITY IMAGE SENSOR WITH PHOTOCONDUCTOR LAYER
Publication
Application
Priority
DE 3138314 A 19810925
Abstract (en)
[origin: EP0075695A2] 1. A bi-dimensional semiconductor image sensor comprising sensor elements which are integrated in a doped semiconductor body (1) of a first conductivity type and are arranged in rows and columns, where the sensor elements each consists of a field effect selector transistor (T1) which has an insulated gate (15) and a light-sensitive element which represents part of a photoconductor layer (9) and is located between a transparent top electrode (12) and a coupling electrode (6) which is connected to the selector transistor, where row lines and column lines are provided, of which the row lines (15') are connected to the gates (15) of the selector transistors and the column lines (17) are conductively connected to terminal zones of the selector transistors, characterised in that the sensor elements of adjacent rows (15', 21') are combined in columns, where the terminal zones of the selector transistors of two sensor elements assigned to same column line (17), consist of a single semiconductor zone (3) which is common to both sensor elements and which is connected to the column line (17).
IPC 1-7
IPC 8 full level
H01L 27/146 (2006.01); H04N 5/335 (2006.01)
CPC (source: EP)
H01L 27/14665 (2013.01)
Designated contracting state (EPC)
BE FR GB IT NL
DOCDB simple family (publication)
EP 0075695 A2 19830406; EP 0075695 A3 19841205; EP 0075695 B1 19870107; DE 3138314 A1 19830414; JP S5869180 A 19830425
DOCDB simple family (application)
EP 82107299 A 19820811; DE 3138314 A 19810925; JP 16596082 A 19820922