EP 0078318 A4 19830624 - ALTERABLE THRESHOLD SEMICONDUCTOR MEMORY DEVICE.
Title (en)
ALTERABLE THRESHOLD SEMICONDUCTOR MEMORY DEVICE.
Title (de)
HALBLEITERSPEICHERANORDNUNG MIT VERÄNDERLICHER SCHWELLE.
Title (fr)
DISPOSITIF DE MEMOIRE A SEMI-CONDUCTEUR A SEUIL MODIFIABLE.
Publication
Application
Priority
US 26238081 A 19810511
Abstract (en)
[origin: WO8204162A1] An alterable threshold memory device (100) includes a semiconductor substrate (11), a memory silicon oxide layer (12) having a thickness lying in the range of 25-40 Angstroms, a silicon nitride layer (13), an interfacial silicon oxide layer (14) having a thickness lying in the range of 30-60 Angstroms, and a polysilicon gate electrode. The device (100) has a high write speed and a large memory window. The nitride layer (13) may have a thickness lying in the range 150-250 Angstroms, enabling the utilization of low write voltages.
IPC 1-7
IPC 8 full level
H01L 21/8246 (2006.01); H01L 21/8247 (2006.01); H01L 27/112 (2006.01); H01L 29/788 (2006.01); H01L 29/792 (2006.01)
CPC (source: EP)
H01L 29/792 (2013.01)
Citation (search report)
- DE 3032364 A1 19820422 - PHILIPS PATENTVERWALTUNG [DE]
- FR 2090259 A1 19720114 - RCA CORP
Designated contracting state (EPC)
AT BE CH DE FR GB LI NL
DOCDB simple family (publication)
WO 8204162 A1 19821125; DK 6283 A 19830110; DK 6283 D0 19830110; EP 0078318 A1 19830511; EP 0078318 A4 19830624; JP S58500683 A 19830428; ZA 823251 B 19830330
DOCDB simple family (application)
US 8200600 W 19820507; DK 6283 A 19830110; EP 82901890 A 19820507; JP 50192182 A 19820507; ZA 823251 A 19820511