EP 0080492 B1 19860319 - GOLD PLATING PROCESS
Title (en)
GOLD PLATING PROCESS
Publication
Application
Priority
US 27251781 A 19810611
Abstract (en)
[origin: WO8204445A1] Process for plating gold on metal surfaces electrically attached to a compound semiconductor. The process involves a photoactivated electrochemical reaction where the reaction takes place only where light is present. The procedure is particularly valuable where gold (18) is to be in small holes (17) or crevices in semiconductor structure (13) since electroplating on the semiconductor surface is avoided. The process is useful for providing low inductance electrical connection to various parts of semiconductor devices such as to the source in gallium arsenide field-effect transistors.
IPC 1-7
IPC 8 full level
H01L 21/28 (2006.01); C25D 3/48 (2006.01); H01L 21/00 (2006.01); H01L 21/288 (2006.01)
CPC (source: EP KR US)
C25D 3/48 (2013.01 - EP US); H01L 21/00 (2013.01 - KR); H01L 21/288 (2013.01 - EP US)
Designated contracting state (EPC)
BE DE FR NL
DOCDB simple family (publication)
GB 2100291 A 19821222; GB 2100291 B 19841010; CA 1202273 A 19860325; DE 3269941 D1 19860424; EP 0080492 A1 19830608; EP 0080492 A4 19830902; EP 0080492 B1 19860319; JP S58500920 A 19830602; KR 840000981 A 19840326; KR 900003248 B1 19900512; US 4399004 A 19830816; WO 8204445 A1 19821223
DOCDB simple family (application)
GB 8216046 A 19820602; CA 403830 A 19820527; DE 3269941 T 19820507; EP 82901892 A 19820507; JP 50192382 A 19820507; KR 820002575 A 19820609; US 27251781 A 19810611; US 8200603 W 19820507