EP 0086812 A1 19830831 - IMPROVED GLASS BONDING MEANS AND METHOD.
Title (en)
IMPROVED GLASS BONDING MEANS AND METHOD.
Title (de)
GLASLEIMUNGSMITTEL UND VERFAHREN.
Title (fr)
PROCEDE ET MOYEN AMELIORES DE SOUDAGE DE VERRE.
Publication
Application
Priority
US 29843581 A 19810901
Abstract (en)
[origin: WO8300949A1] An improved semiconductor die bonding structure and method for electrical devices which utilizes a ductile foil (32) between the semiconductor die (16) and the base of the device package (11). The die is sealed to the foil with an improved die bonding glass material (35) consisting essentially of (by weight percent) 2-10% GeO2, 0-3% SiO2, 62-72% PbO, 0-5% PbF2, 9-12% B2O3, 3-6% Al2O3, 0-5% ZnO, 0.5-2% V2O5, 0-5% CdO, and 4-8% TiO2. The ductile foil (32) is bonded to the ceramic package base (11) directly without intermediate layers or alternatively by means of an improved foil bonding glass material (41) consisting essentially of (by weight percent) 10-15% SiO2, 45-55% PbO, 8-12% ZnO, 2-5% Al2O3, and 25-30% B2O3.
Abstract (fr)
Une structure et un procédé améliorés de soudage d'un dé semiconducteur pour des dispositifs électriques utilisent une feuille ductile (32) entre le dé semiconducteur (16) et la base de l'emballage du dispositif (11). Le dé est scellé dans la feuille au moyen d'un matériau vitreux amélioré de soudage de dé (35) se composant essentiellement (en pourcentage en poids) de 2-10 % de GeO2, 0-3 % de SiO2, 62-72 % de PbO, 0-5 % de PbF2, 9-12 % de B2O3, 3-6 % de Al2O3, 0-5 % de ZnO, 0,5-2 % de V2O5, 0-5 % de CdO et de 4-8 % de TiO2. La feuille ductile (32) est liée à la base de l'emballage céramique (11) directement sans couches intermédiaires ou d'une manière alternative au moyen d'un matériau vitreux amélioré en feuille de liaison (41) se composant essentiellement (en pourcentage en poids) de 10-15 % de SiO2, 45-55 % de PbO, 8-12 % de ZnO, 2-5 % de Al2O3 et de 25-30 % de B2O3.
IPC 1-7
IPC 8 full level
H01L 21/52 (2006.01); C03C 3/12 (2006.01); C03C 3/14 (2006.01); C03C 8/10 (2006.01); C03C 8/12 (2006.01); C03C 8/24 (2006.01); C04B 37/02 (2006.01); H01L 21/58 (2006.01); H01L 23/08 (2006.01); H01L 23/10 (2006.01); H01L 23/15 (2006.01)
CPC (source: EP)
C03C 8/24 (2013.01); C03C 8/245 (2013.01); C04B 37/025 (2013.01); H01L 23/10 (2013.01); H01L 23/15 (2013.01); H01L 24/32 (2013.01); H01L 24/83 (2013.01); C04B 2237/10 (2013.01); C04B 2237/343 (2013.01); C04B 2237/402 (2013.01); C04B 2237/708 (2013.01); C04B 2237/84 (2013.01); C04B 2237/86 (2013.01); H01L 2224/2612 (2013.01); H01L 2224/2919 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/8319 (2013.01); H01L 2224/8385 (2013.01); H01L 2224/8389 (2013.01); H01L 2924/01005 (2013.01); H01L 2924/01006 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01023 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/0103 (2013.01); H01L 2924/01032 (2013.01); H01L 2924/01033 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/01061 (2013.01); H01L 2924/01078 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/01082 (2013.01); H01L 2924/01322 (2013.01); H01L 2924/014 (2013.01); H01L 2924/0665 (2013.01); H01L 2924/07802 (2013.01); H01L 2924/09701 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/14 (2013.01); H01L 2924/15153 (2013.01); H01L 2924/15165 (2013.01); H01L 2924/15787 (2013.01); H01L 2924/19043 (2013.01); H01L 2924/3011 (2013.01)
Designated contracting state (EPC)
DE FR GB
DOCDB simple family (publication)
WO 8300949 A1 19830317; EP 0086812 A1 19830831; EP 0086812 A4 19850610; JP H0340939 B2 19910620; JP S58501372 A 19830818
DOCDB simple family (application)
US 8201021 W 19820726; EP 82902624 A 19820726; JP 50254582 A 19820726