EP 0091079 A2 1983-10-12 - Power MOSFET.
Transistor à effet de champ MOS.
JP 5448582 A
A plurality of drain projections (22a-1, 22a-2, ...) are formed on a surface of a semiconductor substrate (21) in column and row directions. A portion is formed between two longitudinally adjacent drain projections (22a-1, 22a-2) so as to form a source electrode contact. A drain projection (22b-2) which is formed alongside the longitudinally adjacent drain projections (22a-1, 22a-2) is offset therefrom by a length corresponding to half of a long side of each projection.
IPC 1-7 (main, further and additional classification)
IPC 8 full level (invention and additional information)
CPC (invention and additional information)
Designated contracting state (EPC)
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