Global Patent Index - EP 0091079 A2

EP 0091079 A2 1983-10-12 - Power MOSFET.

Title (en)

Power MOSFET.

Title (de)

Leistungs-MOSFET.

Title (fr)

Transistor à effet de champ MOS.

Publication

EP 0091079 A2 (EN)

Application

EP 83103132 A

Priority

JP 5448582 A

Abstract (en)

A plurality of drain projections (22a-1, 22a-2, ...) are formed on a surface of a semiconductor substrate (21) in column and row directions. A portion is formed between two longitudinally adjacent drain projections (22a-1, 22a-2) so as to form a source electrode contact. A drain projection (22b-2) which is formed alongside the longitudinally adjacent drain projections (22a-1, 22a-2) is offset therefrom by a length corresponding to half of a long side of each projection.

IPC 1-7 (main, further and additional classification)

H01L 29/78; H01L 29/08

IPC 8 full level (invention and additional information)

H01L 29/10 (2006.01); H01L 29/78 (2006.01)

CPC (invention and additional information)

H01L 29/7802 (2013.01); H01L 29/1095 (2013.01); H01L 29/78 (2013.01)

Designated contracting state (EPC)

DE FR GB

DOCDB simple family

EP 0091079 A2 19831012; EP 0091079 A3 19831123; EP 0091079 B1 19870610; DE 3372046 D1 19870716; JP S58171861 A 19831008