Global Patent Index - EP 0106698 A2

EP 0106698 A2 19840425 - Method and apparatus for making layered amorphous semiconductor alloys using microwave energy.

Title (en)

Method and apparatus for making layered amorphous semiconductor alloys using microwave energy.

Title (de)

Verfahren und Gerät zur Herstellung von geschichteten amorphen Halbleiterlegierungen unter Benutzung der Mikrowellenenergie.

Title (fr)

Méthode et appareil pour fabriquer des alliages semi-conducteurs amorphes à structure de couches utilisant l'énergie de microondes.

Publication

EP 0106698 A2 19840425 (EN)

Application

EP 83306314 A 19831018

Priority

US 43506882 A 19821018

Abstract (en)

An apparatus (10) and process utilize microwave energy for depositing amorphous alloy materials in layered form onto a receiving surface (14). The process includes the steps of providing at least one source of microwave energy (18), providing at least two reaction gases, each gas containing at least one alloying element to be deposited onto the receiving surface (14), and selectively exciting the reaction gases with microwave energy to create excited species (27 min , 27) containing the alloying elements to be deposited for depositing the alloys in alternating layers (22) onto the receiving surface (14). Preferably, the alternating alloy layers (22) are silicon and germanium alloys.

IPC 1-7

H01L 31/18; H01L 31/06; H01L 21/265

IPC 8 full level

C23C 16/02 (2006.01); C23C 16/511 (2006.01); G03G 5/08 (2006.01); H01L 21/205 (2006.01); H01L 31/04 (2006.01); H01L 31/075 (2006.01); H01L 31/076 (2012.01); H01L 31/10 (2006.01); H01L 31/20 (2006.01)

CPC (source: EP KR)

C23C 16/02 (2013.01 - EP KR); C23C 16/511 (2013.01 - EP KR); H01L 31/076 (2013.01 - EP); H01L 31/202 (2013.01 - EP KR); Y02E 10/548 (2013.01 - EP KR); Y02P 70/50 (2015.11 - EP)

Designated contracting state (EPC)

DE FR GB IT NL

DOCDB simple family (publication)

EP 0106698 A2 19840425; EP 0106698 A3 19860820; AU 2004283 A 19840503; AU 560521 B2 19870409; BR 8305721 A 19840605; IN 160837 B 19870808; JP H03174778 A 19910729; JP H0370896 B2 19911111; JP H073880 B2 19950118; JP S5990923 A 19840525; KR 840006564 A 19841130; MX 159160 A 19890426

DOCDB simple family (application)

EP 83306314 A 19831018; AU 2004283 A 19831011; BR 8305721 A 19831017; IN 723DE1983 A 19831029; JP 19400883 A 19831017; JP 24857190 A 19900918; KR 830004878 A 19831015; MX 19912283 A 19831017