EP 0121688 B1 19870520 - MOS-TRANSISTOR AMPLIFIER
Title (en)
MOS-TRANSISTOR AMPLIFIER
Publication
Application
Priority
JP 2455883 A 19830218
Abstract (en)
[origin: JPS59151510A] PURPOSE:To decrease the power consumption and also to obtain simply a comparatively large load resistance value by using an MOS transistor (TR) of C- MOS constitution as a load. CONSTITUTION:Load P-MOS TRs 8, 81 and N-MOS TRs 22, 23 constitute a C- MOS and it is a load to a differential amplifier. The on-resistance characteristic of the C-MOS load is as shown in figure, the resistance is not much changed by the change in a drain-source voltage VDS, i.e. the change in an input voltage Vin but is nearly constant. As a result, the linearity the same as that of a differential amplifier taking a resistor as a load is obtained for the differential amplifier of the C-MOS load constitution.
IPC 1-7
IPC 8 full level
H03F 1/32 (2006.01); H03F 3/16 (2006.01); H03F 3/34 (2006.01); H03F 3/345 (2006.01); H03F 3/347 (2006.01); H03F 3/45 (2006.01)
CPC (source: EP KR US)
H03F 1/3205 (2013.01 - EP US); H03F 3/16 (2013.01 - KR); H03F 3/345 (2013.01 - EP US); H03F 3/45076 (2013.01 - EP US)
Citation (examination)
- IEEE Journal of Solid State Circuits, Vol. SC14, No. 6, Dec. 79, pp.961-969
- IEEE Journal of Solid State Circuits, Vol. SC13, No. 3, June 78, pp. 383-391
- M. Böhm, "MOS-Schaltungen", Frech Verlag, Stuttgart, 1980, pp. 17, 18, 25, 26
Designated contracting state (EPC)
DE FR GB
DOCDB simple family (publication)
EP 0121688 A1 19841017; EP 0121688 B1 19870520; DE 3463882 D1 19870625; JP S59151510 A 19840830; KR 840008091 A 19841212; KR 900000992 B1 19900223; US 4563654 A 19860107
DOCDB simple family (application)
EP 84101514 A 19840214; DE 3463882 T 19840214; JP 2455883 A 19830218; KR 840000735 A 19840216; US 58127184 A 19840217