EP 0130216 B1 19910508 - A LIGHT BEAM APPLIED TO A LAYERED SEMICONDUCTOR STRUCTURE IS CONTROLLED BY ANOTHER LIGHT BEAM
Title (en)
A LIGHT BEAM APPLIED TO A LAYERED SEMICONDUCTOR STRUCTURE IS CONTROLLED BY ANOTHER LIGHT BEAM
Publication
Application
Priority
US 45546283 A 19830103
Abstract (en)
[origin: WO8402782A1] A nonlinear optical device (10) includes a layered semiconductor structure (14) having layers (15, 19) of different energy band gap materials. Alternate layers (15) of the structure are arranged for containing trapped charge. An input light beam (21) is applied to the layers. A control light beam (17) varies the trapped charge for controlling propagation of the input light beam through the structure.
IPC 1-7
IPC 8 full level
G02F 1/015 (2006.01); G02F 1/017 (2006.01); G02F 1/19 (2006.01); G02F 1/29 (2006.01); G02F 1/35 (2006.01)
CPC (source: EP)
B82Y 20/00 (2013.01); G02F 1/01716 (2013.01); G02F 1/293 (2013.01)
Citation (examination)
- N, APPL. PHYS. LETT., VOL 40 No. 3, Published 01 Feb. 1982, PP. 205-207, TARNG ET AL, "EXTERNAL OFF AND ON SWITCHING OF A BISTABLE OPTICAL DEVICE"
- N, APPL. PHYS. LETT. VOL 26 No. 8, Published 15 April 1975, pp. 463-465, VAN DERZIEL et al, "LASER OSCILLATION FROM QUANTUM STATES IN VERY THIN GaAs-ALo.2Gao.8As Multilayer structures"
Designated contracting state (EPC)
DE FR GB NL
DOCDB simple family (publication)
WO 8402782 A1 19840719; CA 1207071 A 19860702; DE 3382279 D1 19910613; EP 0130216 A1 19850109; EP 0130216 A4 19871208; EP 0130216 B1 19910508; JP H0578014 B2 19931027; JP S60500230 A 19850221
DOCDB simple family (application)
US 8302024 W 19831223; CA 444519 A 19831230; DE 3382279 T 19831223; EP 84900572 A 19831223; JP 50065484 A 19831223