Title (en)

SYSTEM AND METHOD FOR ELIMINATING SHORT CIRCUIT CURRENT PATHS IN PHOTOVOLTAIC DEVICES

Publication

EP 0139795 A3 19860528 (EN)

Application

EP 83306406 A 19831021

Priority

US 43589082 A 19821021

Abstract (en)

[origin: US4451970A] Systems and methods for detecting and eliminating short circuit current paths through photovoltaic devices of the type including at least one semiconductor region overlying a substrate and a layer of conductive light transmissive material overlying the at least one semiconductor region are disclosed. The short circuit current paths which are eliminated extend through the at least one semiconductor region from the substrate to the layer of conductive light transmissive material. The resistivity of the short circuit current path is increased substantially at the interface between the conductive light transmissive material and the semiconductor region by isolating electrically the conductive light transmissive material from the short circuit current path. The isolation can be provided by removing the transparent conductive material from electrical contact or connection with the short circuit current path. The isolation also can be provided by depositing a body of insulating material onto the semiconductor region over an area including a short circuit current path prior to the deposition of the conductive light transmissive material. Further, the short circuit current path can be detected and located by applying a voltage to discrete areas of the device through a conductive solution which path then can be eliminated as described above.

IPC 1-7

H01L 31/18; H01L 31/06

IPC 8 full level

G01R 31/02 (2006.01); H01L 31/0224 (2006.01); H01L 31/04 (2006.01); H01L 31/20 (2006.01); G01R 31/26 (2006.01)

CPC (source: EP KR US)

G01R 31/52 (2020.01 - EP US); H01L 31/022466 (2013.01 - EP US); H01L 31/022475 (2013.01 - EP US); H01L 31/04 (2013.01 - KR); H01L 31/18 (2013.01 - KR); H01L 31/206 (2013.01 - EP US); H01L 31/208 (2013.01 - EP US); H02S 50/10 (2014.12 - EP US); Y02E 10/50 (2013.01 - EP US); Y02P 70/50 (2015.11 - EP US); Y10S 136/29 (2013.01 - EP US)

Citation (search report)

• [A] US 4197141 A 19800408 - BOZLER CARL O [US], et al
• [A] US 4180439 A 19791225 - DEINES JOHN L [US], et al
• [A] US 4251286 A 19810217 - BARNETT ALLEN M
• [A] PATENTS ABSTRACTS OF JAPAN, vol. 6, no. 91 (E-109) [969], 28th May 1982; & JP - A - 57 24 544 (TOKYO SHIBAURA DENKI K.K.) 09-02-1982
• [A] PATENTS ABSTRACTS OF JAPAN, vol. 6, no. 132 (E-119) [1010], 17th July 1982; & JP - A - 57 56 941 (NIPPON DENSHIN DENWA KOSHA) 05-04-1982

Designated contracting state (EPC)

CH DE FR GB IT LI NL

DOCDB simple family (publication)

US 4451970 A 19840605; AU 2042083 A 19840503; BR 8305791 A 19840529; CA 1209233 A 19860805; DE 3381369 D1 19900426; EP 0139795 A2 19850508; EP 0139795 A3 19860528; EP 0139795 B1 19900321; ES 526596 A0 19841216; ES 535567 A0 19851016; ES 8502290 A1 19841216; ES 8601567 A1 19851016; IN 160220 B 19870704; JP H0566752 B2 19930922; JP S5994473 A 19840531; KR 840006566 A 19841130; MX 159161 A 19890426

DOCDB simple family (application)

US 43589082 A 19821021; AU 2042083 A 19831019; BR 8305791 A 19831020; CA 439224 A 19831018; DE 3381369 T 19831021; EP 83306406 A 19831021; ES 526596 A 19831020; ES 535567 A 19840831; IN 721DE1983 A 19831029; JP 19692783 A 19831020; KR 830004959 A 19831020; MX 19916483 A 19831020