Global Patent Index - EP 0142010 B1

EP 0142010 B1 19871223 - PROCESS AND APPARATUS FOR THE ELECTROLYTICAL DEPOSITION OF METALS

Title (en)

PROCESS AND APPARATUS FOR THE ELECTROLYTICAL DEPOSITION OF METALS

Publication

EP 0142010 B1 19871223 (DE)

Application

EP 84111959 A 19841005

Priority

DE 3340732 A 19831110

Abstract (en)

[origin: ES8601338A1] The strip enters the electrolyte (in 8) in vertically downward direction and, after passing around a roller (10), leaves the electrolyte (in 12) in vertically upward direction. A high flow velocity of the electrolyte is maintained relative to the strip and to the anodes (9,11). - The electrolyte is caused to move in counterflow relative to the strip transport direction over the entire strip length (a+a) passing between the anodes (9,11). The electrolyte flow may be produced by applying a pressure differential, e.g. by feeding the electrolyte into the upper end of the strip run-out section (12) which is lower (delta h) than the upper end (overflow) of the run-in section (8) communicating therewith.

[origin: ES8601338A1] The strip enters the electrolyte (in 8) in vertically downward direction and, after passing around a roller (10), leaves the electrolyte (in 12) in vertically upward direction. A high flow velocity of the electrolyte is maintained relative to the strip and to the anodes (9,11). - The electrolyte is caused to move in counterflow relative to the strip transport direction over the entire strip length (a+a) passing between the anodes (9,11). The electrolyte flow may be produced by applying a pressure differential, e.g. by feeding the electrolyte into the upper end of the strip run-out section (12) which is lower (delta h) than the upper end (overflow) of the run-in section (8) communicating therewith.

IPC 1-7

C25D 7/06; C25D 5/08

IPC 8 full level

C25D 5/08 (2006.01); C25D 7/06 (2006.01)

CPC (source: EP KR US)

C25D 7/06 (2013.01 - KR); C25D 7/0628 (2013.01 - EP US)

Citation (examination)

PATENT ABSTRACTS OF JAPAN, unexamined applications, C field, vol. 6, no. 3, January 9, 1982,THE PATENT OFFICE JAPANESE GOVERNMENT,page 83 C 86

Designated contracting state (EPC)

AT BE CH DE FR GB IT LI LU NL SE

DOCDB simple family (publication)

EP 0142010 A1 19850522; EP 0142010 B1 19871223; AT E31560 T1 19880115; AU 3529684 A 19850516; CA 1251415 A 19890321; DE 3468239 D1 19880204; DK 529384 A 19850511; DK 529384 D0 19841107; ES 537508 A0 19851016; ES 8601338 A1 19851016; JP S60114593 A 19850621; KR 850004134 A 19850701; KR 920000247 B1 19920110; NO 844498 L 19850513; US 4634504 A 19870106

DOCDB simple family (application)

EP 84111959 A 19841005; AT 84111959 T 19841005; AU 3529684 A 19841109; CA 467521 A 19841109; DE 3468239 T 19841005; DK 529384 A 19841107; ES 537508 A 19841108; JP 23051384 A 19841102; KR 840006948 A 19841106; NO 844498 A 19841109; US 67040884 A 19841109