EP 0145927 B1 19880203 - INTEGRATED CIRCUIT FET STRUCTURE
Title (en)
INTEGRATED CIRCUIT FET STRUCTURE
Publication
Application
Priority
US 56062483 A 19831212
Abstract (en)
[origin: EP0145927A1] A method for making contact to a small area field effect transistor device is described. A monocrystalline semiconductor body (10) having at least a surface region of a first conductivity type is provided with an insulating layer (14) over the surtace region. A substantially horizontal first conductive layer (16) is formed over the insulating layer. The insulating and first conductive layers are masked and etched to form openings in the layers to the semiconductor body where the source (26), drain (28) and gate region of the device is to be formed. The openings have substantially vertical surfaces on the layered structure. A conformal, highly doped conductive layer (20, 22) of the first conductivity type is formed over the openings having these substantially vertical surfaces and over the insulating and conductive layers. The conformal conductive layer is anisotropically etched to substantially remove the horizontal portions of the conformal layer while leaving the openings with a substantially vertical conformal conductive layer on the sides thereof. The semiconductor body with the layered structure thereon is heated at a suitable temperature to cause the dopant of a second conductivity type to diffuse into the semiconductor body from the conformal conductive layer to form the source (26) and drain (28) regions and a first insulating layer (24) upon the surface of the first conductive layer and the conformal conductive layer. A second insulating layer (36) is formed over the vertical conformal conductive layer. Then a gate dielectric (40) is formed upon the surface of the semiconductor body between the source and drain regions. Electrical contacts (52, 56) are made to the first conductive layer through the first insulator layer (24) which effectively make electrical contact to the source and drain regions via the horizontal conductive layer and the vertical conformal conductive layer.
IPC 1-7
IPC 8 full level
H01L 29/78 (2006.01); H01L 21/336 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 29/45 (2006.01); H01L 29/49 (2006.01)
CPC (source: EP US)
H01L 21/768 (2013.01 - EP US); H01L 23/53271 (2013.01 - EP US); H01L 29/456 (2013.01 - EP US); H01L 29/4925 (2013.01 - EP US); H01L 29/4933 (2013.01 - EP US); H01L 29/66606 (2013.01 - EP US); H01L 2924/0002 (2013.01 - EP US)
Designated contracting state (EPC)
DE FR GB
DOCDB simple family (publication)
EP 0145927 A1 19850626; EP 0145927 B1 19880203; DE 3469245 D1 19880310; JP H0452615 B2 19920824; JP S60124874 A 19850703; US 4546535 A 19851015
DOCDB simple family (application)
EP 84113327 A 19841106; DE 3469245 T 19841106; JP 14981884 A 19840720; US 56062483 A 19831212