Title (en)

SEMICONDUCTOR MEMORY DEVICE

Publication

EP 0149799 A3 19850814 (EN)

Application

EP 84115473 A 19841214

Priority

JP 795784 A 19840120

Abstract (en)

[origin: US4792834A] Disclosed is a semiconductor memory device which has a transfer transistor of a MOS structure on a surface of a semiconductor body, and a trenched capacitor having a groove which is formed so as to extend from a surface of the semiconductor body to a certain depth thereof and an electrode which is formed from a bottom portion of the groove to at least a level above an opening of the groove, the source region of the transfer transistor being connected to the electrode of the trenched capacitor and the drain region thereof being connected to a bit line.

IPC 1-7

H01L 27/10

IPC 8 full level

G11C 11/40 (2006.01); H01L 21/822 (2006.01); H01L 21/8242 (2006.01); H01L 21/8244 (2006.01); H01L 27/04 (2006.01); H01L 27/10 (2006.01); H01L 27/108 (2006.01); H01L 27/11 (2006.01)

CPC (source: EP KR US)

G11C 11/40 (2013.01 - KR); H10B 12/37 (2023.02 - EP US)

Citation (search report)

• [XP] EP 0108390 A1 19840516 - HITACHI LTD [JP]
• [Y] EP 0088451 A1 19830914 - HITACHI LTD [JP]
• [Y] EP 0085988 A2 19830817 - HITACHI LTD [JP]
• [Y] WO 8103241 A1 19811112 - WESTERN ELECTRIC CO [US]
• [A] US 4116720 A 19780926 - VINSON MARK ALEXANDER

Designated contracting state (EPC)

DE FR GB

DOCDB simple family (publication)

US 4792834 A 19881220; DE 3470246 D1 19880505; EP 0149799 A2 19850731; EP 0149799 A3 19850814; EP 0149799 B1 19880330; JP H0531308 B2 19930512; JP S60152058 A 19850810; KR 850005733 A 19850828; KR 890004766 B1 19891125

DOCDB simple family (application)

US 15050588 A 19880201; DE 3470246 T 19841214; EP 84115473 A 19841214; JP 795784 A 19840120; KR 840007745 A 19841207