Global Patent Index - EP 0154337 A3

EP 0154337 A3 19871111 - TRANSISTOR CIRCUIT FOR SEMICONDUCTOR DEVICE WITH HYSTERESIS OPERATION AND MANUFACTURING METHOD THEREFOR

Title (en)

TRANSISTOR CIRCUIT FOR SEMICONDUCTOR DEVICE WITH HYSTERESIS OPERATION AND MANUFACTURING METHOD THEREFOR

Publication

EP 0154337 A3 19871111 (EN)

Application

EP 85102529 A 19850306

Priority

  • JP 4275384 A 19840306
  • JP 4275484 A 19840306
  • JP 6358184 A 19840331

Abstract (en)

[origin: EP0154337A2] A transistor circuit with hysteresis operation, which is formed with a detector part (71, 72) and selector part (73, 74). The detector part (71, 72) detects a change in the level of an input signal (Vin) according to one of first and second threshold levels (V1, V2), and generates an output signal (Vout) having a level corresponding to the input signal (Vin). The level of the input signal (Vin) is changed between a first level (H) and a second level (L) which is lower than the first level (H). The first and second threshold levels (V1, V2) fall within a range defined between the first and second levels (H, L). The selector part (73, 74) selects one of the first and second threshold levels (V1, V2) in accordance with the level of the output signal (Vout), and applies the selected one threshold level (V1 or V2) to the detector part (71, 72).

IPC 1-7

H03K 3/353

IPC 8 full level

H03K 3/3565 (2006.01)

CPC (source: EP US)

H03K 3/3565 (2013.01 - EP US)

Citation (search report)

Designated contracting state (EPC)

DE FR GB

DOCDB simple family (publication)

EP 0154337 A2 19850911; EP 0154337 A3 19871111; EP 0154337 B1 19920122; DE 3585239 D1 19920305; US 4687954 A 19870818

DOCDB simple family (application)

EP 85102529 A 19850306; DE 3585239 T 19850306; US 70850885 A 19850305