Title (en)

SEMICONDUCTOR LASER ARRAY

Publication

EP 0154517 A3 19861112 (EN)

Application

EP 85301371 A 19850228

Priority

JP 3914484 A 19840228

Abstract (en)

[origin: US4694461A] A semiconductor laser array includes a p-GaAs substrate, a p-Ga1-xAlxAs cladding layer, a Ga1-yAlyAs active layer, an n-Ga1-zAlzAs optical guide layer, an n-Ga1-xAlxAs cladding layer and an n-GaAs cap layer formed by the liquid phase epitaxial growth method. A plurality of stripe shaped grooves are formed in the surface of the n-GaAs cap layer so that the bottom of the groove reaches the intermediate of the n-Ga1-zAlzAs optical guide layer. A Ga1-bAlbAs high resistance layer is filled in the plurality of stripe shaped grooves so that injecting current is divided into a plurality of paths, and each laser emitting region is optically, phase coupled to each other with a phase difference of zero degree.

IPC 1-7

H01S 3/19; H01S 3/23

IPC 8 full level

H01S 5/00 (2006.01); H01S 5/40 (2006.01); H01S 5/223 (2006.01)

CPC (source: EP US)

H01S 5/4031 (2013.01 - EP US); H01S 5/2231 (2013.01 - EP US)

Citation (search report)

• [A] EP 0010949 A2 19800514 - XEROX CORP [US]
• [A] APPLIED PHYSICS LETTERS, vol. 44, no. 2, 15th January 1984, pages 157-159, American Institute of Physics, New York, US; E. KAPON et al.: "Longitudinal-mode control in integrated semiconductor laser phased arrays by phase velocity matching"
• [A] APPLIED PHYSICS LETTERS, vol. 37, no. 10, 15th November 1980, pages 866-868, American Institute of Physics, New York, US; D.E. ACKLEY et al.: "Twin-stripe injection laser with leaky-mode coupling"
• [A] XEROX DISCLOSURE JOURNAL, vol. 4, no. 3, May/June 1979, pages 357-358, Stamford, Connecticut, US; R.D. BURNHAM et al.: "Improved leaky mode buried heterostructure (BH) injection lasers"
• [AD] APPLIED PHYSICS LETTERS, vol. 39, no. 1, July 1981, pages 27-29, American Institute of Physics, New York, US; D.E. ACKLEY et al.: "High-power leaky-mode multiple-stripe laser"
• [AD] APPLIED PHYSICS LETTERS, vol. 42, no. 2, January 1983, pages 152-154, American Institute of Physics, New York, US; D.E. ACKLEY: "Single longitudinal mode operation of high power multiple-stripe injection lasers"

Designated contracting state (EPC)

DE GB NL

DOCDB simple family (publication)

US 4694461 A 19870915; DE 3584684 D1 19920102; EP 0154517 A2 19850911; EP 0154517 A3 19861112; EP 0154517 B1 19911121; JP H029468 B2 19900302; JP S60182181 A 19850917

DOCDB simple family (application)

US 70001885 A 19850208; DE 3584684 T 19850228; EP 85301371 A 19850228; JP 3914484 A 19840228