EP 0165027 A2 19851218 - Thin film field effect transistors utilizing a polypnictide semiconductor.
Title (en)
Thin film field effect transistors utilizing a polypnictide semiconductor.
Title (de)
Dünnfilm-Feldeffekttransistor mit einem Polypnictid-Halbleiter.
Title (fr)
Transistor à effet de champ à film mince utilisant un semi-conducteur en pnictide.
Publication
Application
Priority
US 61905384 A 19840611
Abstract (en)
A thin film transistor characterised in that it comprises, as a switched semiconductor portion thereof, a thin film comprising MPx wherein M represents at least one alkali metal; P represents at least one pnictide; and x ranges from 15 to infinity is disclosed. A process for the production of a transistor characterised in that it comprises vacuum plasma sputtering of successive layers in contact of a semiconductor comprising MPx, wherein M represents at least one alkali metal; P represents at least one pnictide, and x ranges from 15 to infinity; and an insulating layer comprising a pnictide is also disclosed. An insulated semidconductor device characterised in that it comprises as the switched semiconductor portion thereof a layer comprising MPx, wherein M represents at least one alkali metal; P; represents at least one pnictide; and x ranges from 15 to infinity: and an insulating layer comprising a pnictide is further disclosed. Referring to the accompanying illustrative diagram, a Schottlky barrier thin film field effect transistor in accordance with the present invention may comprise a glass substrate (20), a high pnictide polypnictide semiconductor (22) of high resistivity, a metal (approximately 1% Ni) doped layer (24) of the same semiconductor material of lower resistivity and metal source (26), gate (28) and drain (30) contacts deposited on layer (24). The present invention provides advances over the prior art.
IPC 1-7
H01L 29/78; H01L 29/24; H01L 21/314; H01L 21/34; H01L 21/363; H01L 29/80
IPC 8 full level
H01L 21/205 (2006.01); H01L 21/314 (2006.01); H01L 21/338 (2006.01); H01L 21/363 (2006.01); H01L 27/12 (2006.01); H01L 29/12 (2006.01); H01L 29/24 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01); H01L 29/78 (2006.01); H01L 29/786 (2006.01); H01L 29/812 (2006.01); H01L 51/00 (2006.01); H01L 51/05 (2006.01); H01L 51/40 (2006.01)
CPC (source: EP KR US)
H01L 21/02422 (2013.01 - EP US); H01L 21/02521 (2013.01 - EP US); H01L 21/02581 (2013.01 - EP US); H01L 21/314 (2016.02 - US); H01L 29/24 (2013.01 - EP US); H01L 29/4908 (2013.01 - EP US); H01L 29/76 (2013.01 - KR); H01L 29/8126 (2013.01 - EP US); H10K 10/46 (2023.02 - EP US); H10K 10/462 (2023.02 - EP US); H10K 10/464 (2023.02 - EP US); H10K 10/466 (2023.02 - EP US); H01L 21/02164 (2013.01 - EP KR US); H01L 21/0217 (2013.01 - EP KR US); H01L 21/02178 (2013.01 - EP KR US); H01L 21/02266 (2013.01 - EP KR US); H01L 21/02274 (2013.01 - EP KR US); H01L 29/517 (2013.01 - EP US); H01L 29/518 (2013.01 - EP US); H10K 71/164 (2023.02 - EP US)
Designated contracting state (EPC)
AT BE CH DE FR GB IT LI LU NL SE
DOCDB simple family (publication)
US 4558340 A 19851210; AU 4341685 A 19851219; DK 260585 A 19851212; DK 260585 D0 19850611; EP 0165027 A2 19851218; EP 0165027 A3 19870819; IL 74685 A0 19850630; JP S613462 A 19860109; KR 860000717 A 19860130
DOCDB simple family (application)
US 61905384 A 19840611; AU 4341685 A 19850607; DK 260585 A 19850611; EP 85304050 A 19850607; IL 7468585 A 19850321; JP 12442385 A 19850610; KR 850002910 A 19850430