EP 0166787 B1 19911127 - COLOUR IMAGE SENSOR
Title (en)
COLOUR IMAGE SENSOR
Publication
Application
Priority
JP 24954683 A 19831229
Abstract (en)
[origin: US4791396A] PCT No. PCT/JP84/00606 Sec. 371 Date Aug. 28, 1985 Sec. 102(e) Date Aug. 28, 1985 PCT Filed Dec. 21, 1984 PCT Pub. No. WO85/03166 PCT Pub. Date Jul. 18, 1985.The present invention relates generally to a photodetector, and more particularly to a photodetector formed by a static induction transistor. The present invention includes the following constituent elements: In the photodetector formed by a static induction transistor, an n+-type buried layer is provided, as a drain or source region of the photodetector, for limiting the thickness of a high resistivity i-type layer between a p+-type region forming a gate and a substrate. Letting the wavelength of light incident to the surface of the photodetector and an absorption coefficient for the incident light be represented by lambda i and alpha i( lambda i), respectively, the distance between the in junction of the abrupt pin junction and the surface of the photodetector xi is <IMAGE> the ratio between the area A( lambda i) of each gate portion for selectively detecting light of the specified wavelength lambda i and the total area Atot of the gate is selected as follows: <IMAGE> where e=2.718, eta ( lambda i) is required quantum efficiency for the wavelength lambda i and R( lambda i) 15 a refractive index for the wavelength lambda i, and the thickness Wi of a depletion layer and the maximum depth ximax of the depletion layer for detecting the specified wavelength lambda i are selected as follows: <IMAGE> thereby providing selective spectral responsivity for the specified wavelength lambda i. Letting three specified wavelengths of blue, green and red light be represented by lambda 1, lambda 2 and lambda 3, the total area of the gate is Atot=A( lambda 1)+A( lambda 2)+A( lambda 3). Pixels for detecting the three wavelengths are arranged in a honeycomb-like pattern, as shown in FIG. 8. For obtaining the maximum photodetection sensitivity for the three wavelengths, for example, 460, 550 and 660 nm, the diffusion depth xjp+ of the gate portions and the depletion layer width Wi between the gate and the n+-type buried source region are selected as given below in Table 1: TABLE 1-ximax Wi xjp+max -xjn+ lambda -B 0.63 mu m 0.4 0.2 3.0 460 nm -G 1.53 mu m 0.9 0.5 2.2 550 -R 3.57 mu m 2.3 1.3 0 660 -
IPC 1-7
IPC 8 full level
H01L 27/146 (2006.01); H01L 31/112 (2006.01); H04N 25/00 (2023.01)
CPC (source: EP US)
H01L 27/14679 (2013.01 - EP US); H01L 31/1126 (2013.01 - EP US)
Designated contracting state (EPC)
DE FR GB NL
DOCDB simple family (publication)
US 4791396 A 19881213; DE 3485308 D1 19920109; EP 0166787 A1 19860108; EP 0166787 A4 19870128; EP 0166787 B1 19911127; JP H0430750 B2 19920522; JP S60143668 A 19850729; WO 8503166 A1 19850718
DOCDB simple family (application)
US 77233885 A 19850828; DE 3485308 T 19841221; EP 85900198 A 19841221; JP 24954683 A 19831229; JP 8400606 W 19841221