EP 0170812 B1 19930120 - METHOD FOR THE MANUFACTURE OF SINTERED CONTACT MATERIAL
Title (en)
METHOD FOR THE MANUFACTURE OF SINTERED CONTACT MATERIAL
Publication
Application
Priority
DE 3421758 A 19840612
Abstract (en)
[origin: US4764227A] Contact materials based on AgSnO2 and having Bi2O3 and CuO as further metal oxide additives were previously disclosed. In these materials the total content of all metal oxides was supposed to be between 10 and 25% by volume with the SnO2 share equal to or greater than 70% by volume of the total amount of oxide. According to this invention the quantity of SnO2 is kept smaller than 70% by volume; specifically at about 65%, but in any case equal to or greater than 50%. The SnO2 weight content is to be in the 4% to 8% range and the weight percentage ratio of SnO2 to CuO is to be between 8:1 and 12:1. In the associated production process, either Bi2O3 powder is purposely admixed to an internally oxidized alloy powder (IOAP) in an additional operation, a grain restructuring with locally different Bi2O3 concentrations occurring in the structure after sintering and compacting. Alternatively, higher bismuth percentages in the alloy powder can be worked with directly, which is again internally oxidized to an IOAP. From these starting materials two-layer sintered contact elements with a solderable silver layer can be efficiently produced.
IPC 1-7
IPC 8 full level
B22F 3/16 (2006.01); C22C 1/05 (2006.01); C22C 1/10 (2006.01); C22C 5/06 (2006.01); C22C 32/00 (2006.01); H01H 1/02 (2006.01); H01H 1/023 (2006.01); H01H 1/0237 (2006.01); H01H 11/04 (2006.01)
CPC (source: EP US)
C22C 32/0021 (2013.01 - EP US); H01H 1/02376 (2013.01 - EP US); B22F 2998/10 (2013.01 - EP US)
Citation (examination)
DE 2754335 A1 19780608 - MATSUSHITA ELECTRIC IND CO LTD
Designated contracting state (EPC)
AT CH DE FR GB IT LI NL SE
DOCDB simple family (publication)
DE 3421758 A1 19851212; AT E84906 T1 19930215; BR 8502780 A 19860218; DE 3587005 D1 19930304; EP 0170812 A2 19860212; EP 0170812 A3 19880323; EP 0170812 B1 19930120; JP H0672276 B2 19940914; JP S6112841 A 19860121; US 4764227 A 19880816; US 4855104 A 19890808; ZA 854391 B 19860226
DOCDB simple family (application)
DE 3421758 A 19840612; AT 85106749 T 19850531; BR 8502780 A 19850611; DE 3587005 T 19850531; EP 85106749 A 19850531; JP 12703785 A 19850611; US 19080488 A 19880506; US 93095886 A 19861112; ZA 854391 A 19850611